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Product Detailed Parameters
- Description：TRANS PREBIAS PNP 50V 0.1A SSM
- Series：-
- Mfr：Toshiba Semiconductor and Storage
- Package：Tape & Reel (TR),Cut Tape (CT)
- Resistors Included：R1 and R2
- Transistor Type：PNP - Pre-Biased
- Current - Collector (Ic) (Max)：100 mA
- Voltage - Collector Emitter Breakdown (Max)：50 V
- Resistor - Base (R1)：22 kOhms
- Resistor - Emitter Base (R2)：22 kOhms
- DC Current Gain (hFE) (Min) @ Ic, Vce：70 @ 10mA, 5V
- Vce Saturation (Max) @ Ib, Ic：300mV @ 250µA, 5mA
- Current - Collector Cutoff (Max)：500nA
- Frequency - Transition：200 MHz
- Power - Max：100 mW
- Grade：-
- Qualification：-
- Mounting Type：Surface Mount
- Package / Case：SC-75, SOT-416
- Supplier Device Package：SSM
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Overview
The RN2103,LF(CT is a PNP digital transistor manufactured by Toshiba Semiconductor and Storage. It integrates a single bipolar junction transistor with built-in bias resistors in an SSM-3 (SOT-416) surface-mount package. The device features a collector-emitter voltage of 50 V and a continuous collector current of 100 mA. Typical base resistor (R1) and emitter-base resistor (R2) values are both 22 kOhms, resulting in a bias resistor ratio of 1. The component has a minimum DC current gain (hFE) of 70 at -10 mA and -5 V, a transition frequency of 200 MHz, and a maximum power dissipation of 100 mW. It is qualified under the AEC-Q200 automotive standard.
Feature Summary
- Integrates a PNP transistor with dual bias resistors to simplify circuit design and reduce component count.
- AEC-Q200 qualified for automotive reliability requirements.
- Optimized for high-speed switching applications with a 200 MHz transition frequency.
Applications
- Automotive interface circuits
- General-purpose switching applications
- Driver circuits
Procurement Notes
Verify the specific ordering suffix against official Toshiba documentation to confirm packaging details and compliance status. Ensure the requested variant matches the required automotive qualification level and package type before finalizing procurement orders.
Selection Notes
Select this component when a PNP digital transistor with a 1:1 bias resistor ratio is required. Verify that the 50 V collector-emitter voltage and 100 mA current ratings meet the target application's electrical demands. Confirm compatibility with the SSM-3 footprint during PCB layout.
Part Context
This part belongs to the RN21xx series of PNP digital transistors from Toshiba. These devices are designed as complementary counterparts to the RN11xx NPN series, providing matched characteristics for push-pull or differential circuit configurations.
Replacement Considerations
Direct substitutes include other RN2103 variants such as RN2103,LXHF(CT. Verify pinout compatibility and electrical specifications before replacing components in existing designs.
FAQ
What is the typical value of the built-in bias resistors?
The typical resistance for both the base resistor (R1) and the emitter-base resistor (R2) is 22 kOhms.
Is this component suitable for automotive applications?
Yes, the RN2103,LF(CT is qualified according to the AEC-Q200 standard for automotive use.
What is the maximum power dissipation?
The maximum power dissipation is 100 mW.
