RN2103MFV,L3F(CT

Overview

The RN2103MFV,L3F(CT is a PNP digital transistor manufactured by Toshiba Semiconductor and Storage. It integrates a single bipolar junction transistor with built-in bias resistors in an ultra-small SOT-723 (VESM) package. The device features a collector-emitter voltage of 50 V, a continuous collector current of 100 mA, and a typical input resistance of 22 kOhms with a resistor ratio of 1. Key electrical parameters include a minimum DC current gain (hFE) of 70 at -10 mA and -5 V, a maximum power dissipation of 100 mW, and a maximum operating temperature of +150 °C.

Feature Summary

• Integrates a PNP transistor with built-in bias resistors to reduce component count and assembly costs.
• Utilizes an ultra-small SOT-723 (VESM) package designed for high-density surface-mount applications.
• Provides complementary functionality to the NPN RN1103MFV series within the same product family.

Applications

• Switching circuits
• Inverter circuits
• Interface circuits
• Driver circuits

Procurement Notes

Verify the specific ordering suffix L3F(CT against official Toshiba documentation to confirm reel packaging specifications and tape-and-reel dimensions. Ensure compatibility with automated pick-and-place equipment requirements. Confirm RoHS compliance status and AEC-Q qualification if automotive application is intended.

Selection Notes

Select this component when a compact PNP switching solution with integrated base biasing is required. The 22 kOhm input resistance suits standard logic interface levels. Verify that the 100 mA collector current and 50 V breakdown voltage meet circuit demands. Consider thermal constraints due to the small package's 100 mW power dissipation limit.

Part Context

This part belongs to Toshiba’s RN21xx series of bias resistor-built-in transistors (digital transistors). It serves as the PNP counterpart to the RN11xx NPN series. The MFV designation indicates the VESM/SOT-723 package type. The LXHF or L3F suffixes typically denote specific taping and reel configurations for mass production.

Replacement Considerations

Direct functional substitutes include other PNP digital transistors with similar 50 V rating, 100 mA current, and ~22 kOhm input resistance in SOT-723 packages. Verify pinout compatibility and hFE characteristics before substitution.

FAQ

What is the typical resistor ratio for the RN2103MFV?

The typical resistor ratio (R1/R2) is 1.

What is the maximum operating temperature for this device?

The maximum operating temperature is +150 °C.

Is this transistor qualified for automotive applications?

While some variants in the RN2103 family carry AEC-Q200 qualification, verification of the specific L3F(CT suffix against the official datasheet is required to confirm automotive grade status.