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Product Detailed Parameters
- Description：TRANS PREBIAS PNP 50V 0.1A VESM
- Series：-
- Mfr：Toshiba Semiconductor and Storage
- Package：Tape & Reel (TR),Cut Tape (CT)
- Resistors Included：R1 and R2
- Transistor Type：PNP - Pre-Biased
- Current - Collector (Ic) (Max)：100 mA
- Voltage - Collector Emitter Breakdown (Max)：50 V
- Resistor - Base (R1)：22 kOhms
- Resistor - Emitter Base (R2)：22 kOhms
- DC Current Gain (hFE) (Min) @ Ic, Vce：70 @ 10mA, 5V
- Vce Saturation (Max) @ Ib, Ic：300mV @ 500µA, 5mA
- Current - Collector Cutoff (Max)：500nA
- Frequency - Transition：250 MHz
- Power - Max：150 mW
- Grade：Automotive
- Qualification：AEC-Q101
- Mounting Type：Surface Mount
- Package / Case：SOT-723
- Supplier Device Package：VESM
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Overview
The RN2103MFV,L3XHF(CT is a PNP bias resistor built-in transistor (BRT) manufactured by Toshiba Semiconductor and Storage. It integrates a single PNP bipolar junction transistor with an internal bias resistor network in a compact SOT-723 (VESM) surface-mount package. The device features a collector-emitter voltage rating of 50 V and a continuous collector current capacity of 100 mA. The typical input resistance is 22 kOhms, with a built-in bias resistor ratio of 1. It offers a minimum DC current gain (hFE) of 70 at -10 mA and -5 V. The component is qualified under AEC-Q200 standards for automotive reliability and supports a maximum operating temperature of +150 °C.
Feature Summary
- Integrates a PNP BJT with a built-in bias resistor network to simplify circuit design and reduce component count.
- AEC-Q200 qualified for enhanced reliability in automotive electronic systems.
- Compact SOT-723 (VESM) surface-mount package designed for space-constrained applications.
Applications
- Automotive system control circuits requiring pre-biased switching.
- General-purpose digital switching in consumer electronics.
- Interface driver stages for microcontrollers and logic gates.
Procurement Notes
Verify the specific suffix L3XHF(CT against official Toshiba documentation to confirm reel specifications and tape-and-reel dimensions. Ensure the procurement channel provides valid traceability records for AEC-Q200 qualified components. Confirm RoHS compliance status through the manufacturer's latest product declaration before integration into regulated assemblies.
Selection Notes
Select this component when a PNP switching solution with integrated base biasing is required. The 22 kOhm input resistance suits standard logic interface levels. Verify that the 50 V collector-emitter voltage and 100 mA current ratings exceed the application's peak operational demands. Consider the SOT-723 footprint constraints during PCB layout planning.
Part Context
This part belongs to Toshiba's RN21xx series of general-purpose PNP bias resistor built-in transistors. The MFV designation indicates the SOT-723 package type, while the LXHF suffix typically denotes specific packaging or automotive qualification variants within the Toshiba portfolio. It serves as a complementary counterpart to NPN devices like the RN1103 series.
Replacement Considerations
Direct substitutes include other PNP BRTs with similar 50 V/100 mA ratings and 22 kOhm input resistance, such as the RN2103 from other manufacturers. Verify pinout compatibility and thermal characteristics before substitution. Cross-reference with Toshiba's RN21xx family members for potential drop-in replacements with adjusted resistance values.
