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The RN2104ACT(TPL3) is a PNP digital transistor manufactured by Toshiba Semiconductor and Storage, featuring built-in bias resistors for simplified circuit design. It operates with a maximum collector-emitter voltage of 50 V and a continuous collector current of 100 mA. The device includes integrated base (R1) and emitter (R2) resistors, both rated at 10 kOhms, providing a fixed bias ratio. It supports a transition frequency of 200 MHz and has a maximum power dissipation of 100 mW. Packaged in the SC-70 (SOT-323) surface-mount format, it ensures compact integration in space-constrained applications.
Verify the specific ordering suffix against the manufacturer's latest datasheet to confirm resistor values and packaging type. Ensure compatibility with RoHS3 standards if required by your region. Confirm availability through authorized distributors as lead times may vary based on production schedules.
Select this component when a PNP configuration with a 1:1 bias resistor ratio is required. It is suitable for applications needing 50 V breakdown and 100 mA current handling. Compare against similar RN21xx series parts if different resistor ratios or NPN polarity are needed. Verify thermal constraints for the SC-70 package in high-density layouts.
This part belongs to Toshiba's RN series of bias resistor built-in transistors (BRTs). These devices integrate bipolar junction transistors with internal resistors to replace multiple discrete components. The RN2104ACT variant specifically denotes the PNP type with 10k/10k resistors in an SC-70 package, widely used in portable devices and industrial control systems.
Check for direct equivalents such as the RN2104LF or other RN2104 variants from Toshiba. Cross-reference with industry-standard pin-compatible alternatives if supply chain constraints exist, ensuring electrical parameters like Vceo and hFE remain within acceptable limits.