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The RN2104,LF(CT is a single PNP digital transistor with built-in bias resistors manufactured by Toshiba Semiconductor and Storage. It operates with a maximum collector-emitter voltage of 50V and a continuous collector current of 100mA. The device features a minimum DC current gain (hFE) of 70 at 1mA and 5V. Its base resistor (R1) is typically 4.7kΩ. The component supports a transition frequency of 200MHz and has a maximum power dissipation of 150mW. It is housed in a compact SOT-323 surface-mount package.
Verify the specific ordering suffix against the manufacturer's official documentation to confirm the exact packaging configuration and tape-and-reel specifications. Ensure that the procurement channel provides valid traceability records consistent with Toshiba Semiconductor and Storage standards. Confirm RoHS compliance status directly from the latest datasheet revision before finalizing purchase orders.
Select this component when a single PNP digital transistor with a 50V rating and 100mA current capacity is required. The integrated 4.7kΩ base resistor simplifies drive circuitry compared to discrete transistors. Consider the SOT-323 package dimensions for space-constrained PCB layouts. Verify that the 200MHz transition frequency meets the switching speed requirements of the target application.
This part belongs to Toshiba's RN series of digital transistors, which combine bipolar transistors with internal biasing networks. The RN2104 specifically utilizes a PNP configuration within a small outline transistor package. This series is designed to reduce component count and assembly time in digital logic circuits by integrating necessary resistance elements directly onto the semiconductor die.
Publicly confirmed substitute part numbers are not available in the provided source material. Cross-reference with other manufacturers' PNP digital transistors having similar Vceo, Ic, and R1 values only after verifying electrical compatibility through official datasheets.