RN2104MFV,L3F

Overview

The RN2104MFV,L3F is a PNP pre-biased digital transistor manufactured by Toshiba Semiconductor and Storage. It integrates a single bias resistor (R1) with a bipolar junction transistor in a compact surface-mount package. The device supports a maximum collector-emitter voltage of 50 V and a continuous collector current of 100 mA, with a power dissipation rating of 150 mW. The built-in base resistor has a typical value of 47 kOhms. Key electrical characteristics include a minimum DC current gain (hFE) of 120 at 1 mA and 5 V, and a maximum saturation voltage of 300 mV at 500 µA base current and 5 mA collector current.

Feature Summary

• Integrates a PNP BJT with a single internal bias resistor to simplify circuit design and reduce component count.
• Provides high current gain and low saturation voltage for efficient switching performance.
• Designed for surface-mount assembly in a small outline package suitable for space-constrained applications.

Applications

• General-purpose switching circuits
• Driver stages for relays or LEDs
• Logic level translation interfaces

Procurement Notes

Verify the specific ordering suffix against the manufacturer's official datasheet to confirm pinout and electrical tolerances. Ensure the component meets AEC-Q101 qualification requirements if used in automotive contexts. Cross-reference the supplier's documentation with Toshiba Semiconductor and Storage specifications to validate authenticity and lot traceability before integration into production.

Selection Notes

Select this component when a PNP configuration with a 47 kOhm base resistor is required. Compare the 50 V breakdown voltage and 100 mA current limit against load requirements. Consider the SOT-723 footprint dimensions for PCB layout compatibility. Evaluate thermal management needs based on the 150 mW power dissipation rating under expected operating conditions.

Part Context

This part belongs to Toshiba's RN series of bias resistor built-in transistors, commonly referred to as digital transistors. These devices replace discrete resistor-transistor networks, offering improved reliability and reduced board space. The RN21xx series specifically denotes PNP configurations with varying resistor values, standardized across various industrial and consumer electronics platforms.

Replacement Considerations

Direct substitutes include other PNP digital transistors with similar 50 V ratings, 100 mA current capacity, and ~47 kOhm input resistance in SOT-723 packages. Verify pin compatibility and hFE characteristics before substitution. Alternative manufacturers may offer equivalent parts, but electrical parameters must be matched precisely to ensure circuit functionality.