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The RN2104MFV,L3XHF(CT is a PNP digital transistor manufactured by Toshiba Semiconductor and Storage. It integrates a single PNP bipolar junction transistor with built-in bias resistors in a compact surface-mount package. The device features a maximum collector-emitter voltage (VCEO) of 50 V and a continuous collector current (IC) of 100 mA. The typical input resistor value is 47 kOhms, with a resistor ratio of 1. It operates within a temperature range of -55°C to +150°C and has a maximum power dissipation of 150 mW.
Verify the exact suffix L3XHF(CT against official Toshiba documentation to confirm tape-and-reel specifications and moisture sensitivity levels. Ensure compatibility with standard reflow soldering profiles for the VESM-3 package. Cross-reference the part number with authorized distributors to confirm availability and authenticity before procurement.
Select this component when a PNP configuration with a 47 kOhm base resistor is required. Verify that the 50 V voltage rating and 100 mA current capacity meet the specific load requirements. Consider the 150 mW power dissipation limit and thermal management needs for the intended application environment.
This part belongs to Toshiba's RN series of bias resistor-built-in transistors, commonly referred to as digital transistors. These devices replace discrete resistor networks and individual transistors, reducing board space and assembly costs. The RN2104 variant specifically provides PNP polarity with a fixed resistor ratio of 1.
Direct substitutes include other PNP digital transistors with similar 50V/100mA ratings and 47kOhm input resistance, such as those from ON Semiconductor or ROHM. Verify pinout compatibility and electrical parameters before substitution.