RN2104MFV,L3XHF(CT

RN2104MFV,L3XHF(CT

$0.22
  • Description:TRANS PREBIAS PNP 50V 0.1A VESM
  • Series:-

SKU:c2486073ec8b Category: Brand:

  
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Product Detailed Parameters

  • Description:TRANS PREBIAS PNP 50V 0.1A VESM
  • Series:-
  • Mfr:Toshiba Semiconductor and Storage
  • Package:Tape & Reel (TR),Cut Tape (CT)
  • Resistors Included:R1 and R2
  • Transistor Type:PNP - Pre-Biased
  • Current - Collector (Ic) (Max):100 mA
  • Voltage - Collector Emitter Breakdown (Max):50 V
  • Resistor - Base (R1):47 kOhms
  • Resistor - Emitter Base (R2):47 kOhms
  • DC Current Gain (hFE) (Min) @ Ic, Vce:80 @ 10mA, 5V
  • Vce Saturation (Max) @ Ib, Ic:300mV @ 500µA, 5mA
  • Current - Collector Cutoff (Max):500nA
  • Frequency - Transition:250 MHz
  • Power - Max:150 mW
  • Grade:Automotive
  • Qualification:AEC-Q101
  • Mounting Type:Surface Mount
  • Package / Case:SOT-723
  • Supplier Device Package:VESM

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RN2104MFV,L3XHF(CT

Overview

The RN2104MFV,L3XHF(CT is a PNP digital transistor manufactured by Toshiba Semiconductor and Storage. It integrates a single PNP bipolar junction transistor with built-in bias resistors in a compact surface-mount package. The device features a maximum collector-emitter voltage (VCEO) of 50 V and a continuous collector current (IC) of 100 mA. The typical input resistor value is 47 kOhms, with a resistor ratio of 1. It operates within a temperature range of -55°C to +150°C and has a maximum power dissipation of 150 mW.

Feature Summary

  • Integrates a PNP transistor with built-in bias resistors to simplify circuit design
  • Compact SMD packaging suitable for space-constrained applications
  • High operating temperature capability up to 150°C

Applications

  • General-purpose switching circuits
  • Logic level translation interfaces
  • Driver stages for small loads

Procurement Notes

Verify the exact suffix L3XHF(CT against official Toshiba documentation to confirm tape-and-reel specifications and moisture sensitivity levels. Ensure compatibility with standard reflow soldering profiles for the VESM-3 package. Cross-reference the part number with authorized distributors to confirm availability and authenticity before procurement.

Selection Notes

Select this component when a PNP configuration with a 47 kOhm base resistor is required. Verify that the 50 V voltage rating and 100 mA current capacity meet the specific load requirements. Consider the 150 mW power dissipation limit and thermal management needs for the intended application environment.

Part Context

This part belongs to Toshiba's RN series of bias resistor-built-in transistors, commonly referred to as digital transistors. These devices replace discrete resistor networks and individual transistors, reducing board space and assembly costs. The RN2104 variant specifically provides PNP polarity with a fixed resistor ratio of 1.

Replacement Considerations

Direct substitutes include other PNP digital transistors with similar 50V/100mA ratings and 47kOhm input resistance, such as those from ON Semiconductor or ROHM. Verify pinout compatibility and electrical parameters before substitution.

RN2104MFV,L3XHF(CTRN2104MFV,L3XHF(CT
$0.22
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