RN2104(T5L,F,T)

Overview

The RN2104(T5L,F,T) is a dual NPN pre-biased bipolar junction transistor (BJT) array manufactured by Toshiba Semiconductor and Storage. It integrates two NPN transistors with built-in bias resistors in a compact surface-mount package, specifically the US6 (SC-88/SOT-363) form factor. Key electrical specifications include a maximum collector-emitter voltage of 50V and a continuous collector current of 100mA. The device features a DC current gain (hFE) of at least 70 at 10mA and 5V, with a saturation voltage of 300mV max at 250µA base current and 5mA collector current. Internal bias resistors are typically 47kΩ for R1 and 47kΩ for R2. The component operates within a temperature range of -40°C to 150°C junction temperature and dissipates up to 200mW of power.

Feature Summary

• Integrates dual NPN transistors with fixed internal bias resistors to simplify circuit design and reduce component count.
• Utilizes a small US6 surface-mount package suitable for space-constrained portable electronic applications.
• Provides high switching speed and low saturation voltage for efficient digital logic interfacing.

Applications

• Digital logic level shifting and interface circuits between microcontrollers and peripheral devices.
• Switching applications in portable consumer electronics such as mobile phones and handheld devices.
• Driver circuits for small-signal loads in embedded systems requiring compact discrete solutions.

Procurement Notes

Verify the specific suffix configuration when ordering, as variations like T5L, F, or T may denote tape-and-reel packaging, lead-free compliance, or specific manufacturing codes. Confirm RoHS3 compliance status directly with the manufacturer or authorized distributors, as environmental declarations can vary by production batch. Ensure the supplier provides official datasheets matching the exact part number to validate resistor values and pinout configurations before integration into final designs.

Selection Notes

Select this component when a dual NPN pre-biased solution is required in a minimal footprint package. Compare hFE and Vce(sat) specifications against load requirements to ensure adequate drive capability. Verify that the integrated resistor values align with the driving source's output current limits to prevent excessive loading. Consider thermal dissipation constraints given the 200mW power rating in the small US6 package during high-duty-cycle operations.

Part Context

The RN2104 belongs to Toshiba's RN series of pre-biased transistor arrays, which combine transistors and bias resistors in single packages. This series is designed to replace multiple discrete components, reducing board space and assembly costs. The RN2104 specifically offers a dual NPN configuration, contrasting with PNP variants like the RN2905, providing designers with flexible options for complementary or differential circuit topologies in modern electronics.

Replacement Considerations

Cross-reference with other dual NPN pre-biased transistors in SC-88/SOT-363 packages from manufacturers like ON Semiconductor or ROHM. Verify pinout compatibility and resistor tolerance differences, as these may affect circuit performance without redesign. Ensure replacement parts meet the same 50V/100mA ratings and thermal characteristics for direct substitution in existing layouts.