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The RN2105,LXHF(CT is a single PNP pre-biased bipolar transistor manufactured by Toshiba Semiconductor and Storage. It integrates internal bias resistors with a typical base series resistor (R1) of 2.2 kOhms and a typical base-emitter resistor (R2) of 47 kOhms. The device features a maximum collector-emitter voltage (VCEO) of 50 V and a continuous collector current (IC) of 100 mA. It operates within a power dissipation limit of 100 mW and supports a maximum operating temperature of +150°C. The component is housed in an SSM-3 (SOT-416) surface-mount package and holds AEC-Q200 automotive qualification.
Verify the specific suffix LXHF against the official Toshiba datasheet to confirm tape-and-reel packaging specifications and lead time requirements. Ensure the procurement channel provides valid traceability documentation for automotive-grade components. Cross-reference the ordering code with the manufacturer's latest release notes to confirm RoHS compliance status and any recent package marking changes.
Select this component when a single PNP digital transistor with low input impedance is required for high-speed switching applications. The integrated 2.2k/47k resistor network reduces board space compared to discrete solutions. Consider the 100mA current rating and 50V voltage limit to ensure adequate headroom for the target load conditions and supply voltages.
This part belongs to Toshiba's RN series of Bias Resistor Built-in Transistors (BRT). These devices combine bipolar transistors with on-chip resistors to replace multiple discrete components. The RN2105 specifically addresses applications needing compact, reliable PNP switching elements with standardized electrical characteristics for mass production environments.
Publicly confirmed substitute part numbers are not available in the provided source material. Verify pinout compatibility and electrical parameter margins before considering alternative manufacturers.