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Product Detailed Parameters
- Description：TRANS PREBIAS PNP 50V 0.1A VESM
- Series：-
- Mfr：Toshiba Semiconductor and Storage
- Package：Tape & Reel (TR),Cut Tape (CT)
- Resistors Included：R1 and R2
- Transistor Type：PNP - Pre-Biased
- Current - Collector (Ic) (Max)：100 mA
- Voltage - Collector Emitter Breakdown (Max)：50 V
- Resistor - Base (R1)：2.2 kOhms
- Resistor - Emitter Base (R2)：47 kOhms
- DC Current Gain (hFE) (Min) @ Ic, Vce：80 @ 10mA, 5V
- Vce Saturation (Max) @ Ib, Ic：300mV @ 500µA, 5mA
- Current - Collector Cutoff (Max)：500nA
- Frequency - Transition：250 MHz
- Power - Max：150 mW
- Grade：-
- Qualification：-
- Mounting Type：Surface Mount
- Package / Case：SOT-723
- Supplier Device Package：VESM
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Overview
The RN2105MFV,L3F is a PNP digital transistor manufactured by Toshiba Semiconductor and Storage, featuring built-in bias resistors within an ultra-small VESM (SOT-723) surface-mount package. It operates with a maximum collector current of 100 mA and a collector-emitter breakdown voltage of 50 V. The device incorporates specific internal resistor values: R1 is 47 kOhms and R2 is 47 kOhms. It offers a minimum DC current gain (hFE) of 70 at 10 mA and 5 V, with a maximum saturation voltage of 300 mV under specified base and collector currents. The component is designed for high-density mounting in compact electronic equipment.
Feature Summary
- Integrates bias resistors directly into the transistor structure to reduce external component count and assembly costs.
- Utilizes an ultra-small VESM package suitable for very high-density mounting applications.
- Provides complementary functionality to the corresponding NPN series devices.
Applications
- Switching circuits
- Inverter circuits
- Interface circuits
- Driver circuits
Procurement Notes
Verify the part status carefully as some listings indicate it may be not recommended for new designs. Confirm the exact suffix L3F matches your requirements. Ensure the distributor source provides official documentation from Toshiba Semiconductor and Storage rather than generic third-party descriptions.
Selection Notes
Select this PNP variant when a complementary device is needed to match the RN1105MFV NPN counterpart. Verify that the 47k/47k resistor ratio meets the circuit design requirements. Check if the AEC-Q101 qualification is necessary for automotive or high-reliability applications, as indicated in related product categories.
Part Context
This component belongs to the RN21xxMFV series of PNP digital transistors from Toshiba. It is part of a broader family that includes various resistor ratios and complementary NPN types like the RN11xx series. The series is characterized by its small footprint and integrated biasing solutions for general-purpose switching tasks.
Replacement Considerations
Publicly confirmed substitute part numbers are not available in the provided data. Designers should consult Toshiba's official selection guide for direct equivalents or verify compatibility with other manufacturers' PNP digital transistors having similar VESM packages and electrical characteristics.
