RN2105MFV,L3XHF(CT

RN2105MFV,L3XHF(CT

$0.23
  • Description:TRANS PREBIAS PNP 50V 0.1A VESM
  • Series:-

SKU:92e5ab49e6fe Category: Brand:

  
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Product Detailed Parameters

  • Description:TRANS PREBIAS PNP 50V 0.1A VESM
  • Series:-
  • Mfr:Toshiba Semiconductor and Storage
  • Package:Tape & Reel (TR),Cut Tape (CT)
  • Resistors Included:R1 and R2
  • Transistor Type:PNP - Pre-Biased
  • Current - Collector (Ic) (Max):100 mA
  • Voltage - Collector Emitter Breakdown (Max):50 V
  • Resistor - Base (R1):2.2 kOhms
  • Resistor - Emitter Base (R2):47 kOhms
  • DC Current Gain (hFE) (Min) @ Ic, Vce:80 @ 10mA, 5V
  • Vce Saturation (Max) @ Ib, Ic:300mV @ 500µA, 5mA
  • Current - Collector Cutoff (Max):500nA
  • Frequency - Transition:250 MHz
  • Power - Max:150 mW
  • Grade:Automotive
  • Qualification:AEC-Q101
  • Mounting Type:Surface Mount
  • Package / Case:SOT-723
  • Supplier Device Package:VESM

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RN2105MFV,L3XHF(CT

Overview

The RN2105MFV,L3XHF(CT is a PNP digital transistor manufactured by Toshiba Semiconductor and Storage. It integrates a single PNP bipolar junction transistor with built-in bias resistors in a compact surface-mount package. The device features a maximum collector-emitter voltage (Vceo) of 50 V and a continuous collector current (Ic) of 100 mA. The typical input resistor ratio is 1:2, with specific resistance values of R1 at 47 kΩ and R2 at 22 kΩ. The minimum DC current gain (hFE) is specified as 70 at a collector current of 10 mA and Vce of -5 V. The unit operates within a temperature range of -55°C to +150°C and has a maximum power dissipation of 150 mW.

Feature Summary

  • Integrates a PNP transistor with dual bias resistors for simplified circuit design
  • Compact SOT-723 (VESM) surface-mount packaging for space-constrained applications
  • High thermal stability supporting operation up to 150°C junction temperature

Applications

  • General-purpose switching circuits
  • Logic level translation interfaces
  • Driver stages for small-signal loads

Procurement Notes

Verify the exact suffix designation during procurement, as variations such as L3F or L3X may indicate differences in tape-and-reel specifications or regional distribution channels rather than functional changes. Confirm that the component meets RoHS compliance requirements if mandated by the target assembly standards. Ensure the ordering code matches the specific packaging format required for automated pick-and-place equipment.

Selection Notes

Select this component when a PNP logic interface with a 1:2 resistor ratio is required. The 50 V rating suits low-voltage digital systems. Compare hFE minimums against load requirements to ensure adequate saturation. Verify that the SOT-723 footprint aligns with the PCB layout constraints. Consider thermal management capabilities given the 150 mW power dissipation limit in enclosed environments.

Part Context

This part belongs to Toshiba's RN2xxx series of pre-biased transistors. These devices replace discrete resistor networks to reduce board space and assembly costs. The RN21xx series specifically denotes PNP configurations. This family is widely used in consumer electronics and industrial control panels where signal conditioning and level shifting are necessary between microcontrollers and peripheral devices.

Replacement Considerations

Direct substitutes include other PNP digital transistors with similar 50 V ratings and 100 mA currents. Check equivalent models from manufacturers like ON Semiconductor or ROHM with matching R1/R2 ratios. Ensure pinout compatibility for SOT-723 packages before substitution.

RN2105MFV,L3XHF(CTRN2105MFV,L3XHF(CT
$0.23
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