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The RN2106ACT(TPL3) is a PNP bias resistor built-in transistor (BRT) manufactured by Toshiba Semiconductor and Storage. It integrates a single PNP bipolar junction transistor with two internal bias resistors in a compact surface-mount package. The device is designed for switching applications, offering simplified circuit design by reducing external component count. Key electrical characteristics include a maximum collector-emitter voltage of 50 V and a maximum collector current of 100 mA. The integrated resistors typically feature a ratio of 1:100, facilitating direct interfacing with digital logic outputs.
Verify the specific suffix TPL3 against the official Toshiba datasheet to confirm tape-and-reel packaging specifications and binning details. Ensure compatibility with RoHS directives if required by the target market regulations. Cross-reference the manufacturer part number with authorized distributors to confirm current production status and availability channels.
Select this component when a PNP configuration with a 1:100 resistor ratio is required for driving loads from low-current digital sources. Compare thermal dissipation requirements against the package power rating. Consider alternative pinouts if footprint constraints differ from standard SOT-323 or SC-70 variants within the RN series family.
This part belongs to Toshiba's RN series of Bias Resistor Built-in Transistors, which are widely used in consumer electronics and industrial control systems. The series offers various polarities and resistor ratios to replace multiple discrete components. The RN2106ACT variant specifically addresses PNP switching needs in space-constrained designs.
Direct substitutes may include other PNP BRTs with identical 50V/100mA ratings and 1:100 resistor ratios from manufacturers like Onsemi or ROHM. Verify pinout compatibility and thermal performance before substitution. Check for equivalent AEC-Q101 qualification if automotive reliability is required.