RN2106,LF(CT

Overview

The RN2106,LF(CT is a digital transistor manufactured by Toshiba Semiconductor and Storage. It consists of two PNP transistors with built-in bias resistors in a US6 surface-mount package. The device supports a maximum collector current of 100mA and a collector-emitter voltage of 50V. Key electrical parameters include a DC current gain (hFE) of 80 at 10mA and 5V, and a saturation voltage of 300mV at 250µA base current and 5mA collector current. The transition frequency is rated at 200MHz with a maximum power dissipation of 200mW.

Feature Summary

• Integrates dual PNP transistors with pre-biased resistors to simplify circuit design
• Provides high-speed switching capabilities suitable for interface applications
• Utilizes compact US6 surface-mount packaging for space-constrained designs

Applications

• Switching circuits
• Inverter circuits
• Interface circuits
• Driver circuits

Procurement Notes

Verify the specific ordering suffix against official documentation to confirm package type and tape-and-reel specifications. Confirm RoHS compliance status and moisture sensitivity level requirements prior to integration into manufacturing processes.

Selection Notes

Select this component when dual PNP logic inversion or buffering is required in a minimal footprint. Ensure the 50V voltage rating and 100mA current capacity align with the target load requirements. Verify that the integrated resistor values match the necessary drive conditions for the connected logic family.

Part Context

This part belongs to the RN2901-06 series of bias resistor built-in transistors from Toshiba. These devices are designed to replace discrete resistor-transistor networks, reducing component count and assembly time in consumer electronics and industrial control systems requiring reliable switching performance.

Replacement Considerations

The RN2106MFV is listed as an alternative within the same product family. Verify pin compatibility and electrical parameter equivalence before substitution.