RN2106,LXHF(CT

Overview

The RN2106,LXHF(CT is a PNP digital transistor from Toshiba Semiconductor and Storage, designed for automotive applications with AEC-Q101 qualification. It integrates a single PNP epitaxial planar silicon transistor with bias resistors in an SSM-3 (SOT-416) surface-mount package. Key electrical parameters include a collector-emitter voltage (VCEO) of -50 V, a continuous collector current (IC) of -100 mA, and a power dissipation (Pd) of 100 mW. The typical base resistor (R1) is 47 kOhms, and the typical emitter-base resistor (R2) is 47 kOhms. The device features a minimum DC current gain (hFE) of 50 at IC = -10 mA and VCE = -5 V, with a maximum operating temperature of +150°C.

Feature Summary

• Integrated bias resistors simplify circuit design by reducing component count and manufacturing steps.
• Automotive-grade reliability ensured through AEC-Q101 qualification for robust performance in vehicle environments.
• High thermal stability supports operation at elevated temperatures up to +150°C.

Applications

• Switching circuits
• Inverter circuits
• Interface circuits
• Driver circuits

Procurement Notes

Verify the specific suffix LXHF against the official Toshiba datasheet to confirm tape-and-reel packaging and automotive grade status. Ensure the ordering code matches the required resistance values and package type. Cross-reference with authorized distributors to confirm availability and authenticity, as automotive components require strict supply chain verification.

Selection Notes

Select this component when a PNP digital transistor with high input impedance is required for automotive switching or driver applications. The 47k/47k resistor configuration suits interfaces needing moderate drive capability. Compare hFE and saturation voltage requirements against load specifications to ensure adequate switching performance within the 100mA current limit.

Part Context

This part belongs to Toshiba's RN series of pre-biased transistors, which combine bipolar junction transistors with internal biasing networks. The RN2106 variant specifically provides a PNP configuration optimized for compact PCB layouts in automotive electronics, offering a cost-effective alternative to discrete resistor-transistor combinations.

Replacement Considerations

Direct substitutes must match the PNP polarity, -50V VCEO, -100mA IC, and SSM-3 package. Verify equivalent resistance ratios and hFE characteristics. Other Toshiba models like RN2116 share similar packages but differ in resistor values; ensure functional compatibility before substitution.