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The RN2106MFV,L3F is a PNP digital transistor manufactured by Toshiba Semiconductor and Storage, featuring built-in bias resistors within an ultra-small VESM (SOT-723) surface-mount package. It operates with a maximum collector-emitter voltage of 50 V and a continuous collector current of 100 mA. The device incorporates specific internal resistor values: R1 is 4.7 kOhms and R2 is 47 kOhms. Key electrical characteristics include a minimum DC current gain (hFE) of 70 at 10 mA and 5 V, a maximum saturation voltage of 300 mV at specified base and collector currents, and a power dissipation rating of 150 mW. The component supports a maximum operating temperature of +150 °C.
Verify the complete part number including the trailing suffix, as variations such as CT may indicate specific tape-and-reel packaging configurations distinct from standard reel orders. Confirm AEC-Q101 qualification status if automotive reliability standards are required for the target application environment.
Select this PNP variant when a complementary device to the RN1106MFV is needed for differential signaling or push-pull stages. Ensure the 4.7 kOhm input resistance aligns with the driving source impedance requirements. Verify that the 100 mA collector current limit suffices for the intended load switching duties.
This component belongs to the RN21xxMFV series of PNP digital transistors. It serves as the PNP counterpart to the RN11xxMFV NPN series, enabling designers to implement symmetric circuit topologies using identical resistor ratios and package footprints across both polarities.
Publicly confirmed substitute part numbers are not available in the provided documentation. Cross-reference with other PNP digital transistors in the SOT-723 package only after verifying exact resistor ratios and hFE specifications match the original design constraints.