RN2106MFV,L3F(CT

RN2106MFV,L3F(CT

$0.13
  • Description:TRANS PREBIAS PNP 50V 0.1A VESM
  • Series:-

SKU:006a4b2e426c Category: Brand:

  
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Product Detailed Parameters

  • Description:TRANS PREBIAS PNP 50V 0.1A VESM
  • Series:-
  • Mfr:Toshiba Semiconductor and Storage
  • Package:Tape & Reel (TR),Cut Tape (CT)
  • Resistors Included:R1 and R2
  • Transistor Type:PNP - Pre-Biased
  • Current - Collector (Ic) (Max):100 mA
  • Voltage - Collector Emitter Breakdown (Max):50 V
  • Resistor - Base (R1):4.7 kOhms
  • Resistor - Emitter Base (R2):47 kOhms
  • DC Current Gain (hFE) (Min) @ Ic, Vce:80 @ 10mA, 5V
  • Vce Saturation (Max) @ Ib, Ic:300mV @ 500µA, 5mA
  • Current - Collector Cutoff (Max):500nA
  • Frequency - Transition:250 MHz
  • Power - Max:150 mW
  • Grade:-
  • Qualification:-
  • Mounting Type:Surface Mount
  • Package / Case:SOT-723
  • Supplier Device Package:VESM

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RN2106MFV,L3F(CT

Overview

The RN2106MFV,L3F is a PNP digital transistor manufactured by Toshiba Semiconductor and Storage, featuring built-in bias resistors within an ultra-small VESM (SOT-723) surface-mount package. It operates with a maximum collector-emitter voltage of 50 V and a continuous collector current of 100 mA. The device incorporates specific internal resistor values: R1 is 4.7 kOhms and R2 is 47 kOhms. Key electrical characteristics include a minimum DC current gain (hFE) of 70 at 10 mA and 5 V, a maximum saturation voltage of 300 mV at specified base and collector currents, and a power dissipation rating of 150 mW. The component supports a maximum operating temperature of +150 °C.

Feature Summary

  • Integrates bias resistors directly into the transistor structure to reduce external component count and simplify circuit design.
  • Utilizes an ultra-small VESM package optimized for high-density mounting applications in compact electronic devices.
  • Provides complementary functionality to the NPN RN1106MFV series for balanced push-pull or interface circuit configurations.

Applications

  • Switching circuits requiring compact form factors
  • Inverter logic circuits
  • Interface driver circuits

Procurement Notes

Verify the complete part number including the trailing suffix, as variations such as CT may indicate specific tape-and-reel packaging configurations distinct from standard reel orders. Confirm AEC-Q101 qualification status if automotive reliability standards are required for the target application environment.

Selection Notes

Select this PNP variant when a complementary device to the RN1106MFV is needed for differential signaling or push-pull stages. Ensure the 4.7 kOhm input resistance aligns with the driving source impedance requirements. Verify that the 100 mA collector current limit suffices for the intended load switching duties.

Part Context

This component belongs to the RN21xxMFV series of PNP digital transistors. It serves as the PNP counterpart to the RN11xxMFV NPN series, enabling designers to implement symmetric circuit topologies using identical resistor ratios and package footprints across both polarities.

Replacement Considerations

Publicly confirmed substitute part numbers are not available in the provided documentation. Cross-reference with other PNP digital transistors in the SOT-723 package only after verifying exact resistor ratios and hFE specifications match the original design constraints.

RN2106MFV,L3F(CTRN2106MFV,L3F(CT
$0.13
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