RN2106MFV,L3XHF(CT

Overview

The RN2106MFV,L3XHF(CT is a Bias Resistor Built-in Transistor (Digital Transistor) manufactured by Toshiba Semiconductor and Storage. It features an NPN bipolar junction transistor integrated with two internal base resistors, specifically R1 of 4.7 kΩ and R2 of 47 kΩ. The device is rated for a maximum collector-emitter voltage (Vceo) of 50 V and a continuous collector current (Ic) of 100 mA. It operates within a surface-mount VESM package, which corresponds to the SOT-723 form factor. The component is designed for switching applications requiring simplified biasing circuits.

Feature Summary

• Integrates NPN transistor with dual base resistors to simplify circuit design
• Eliminates external bias components to reduce board space and assembly steps
• Provides stable switching performance with defined input resistance ratios

Applications

• General-purpose signal switching in consumer electronics
• Level shifting interfaces between logic families
• Driver circuits for small loads in portable devices

Procurement Notes

Verify the exact suffix configuration against official Toshiba documentation, as variations such as L3F or L3X may indicate different tape-and-reel specifications or packaging formats. Confirm RoHS compliance status and AEC-Q101 qualification requirements directly from the manufacturer's datasheet before procurement. Ensure the ordering code matches the specific reel quantity and lead-free designation required for your production line.

Selection Notes

Select this component when a compact NPN digital transistor with a 4.7 kΩ input resistor and 47 kΩ emitter-base resistor is required. Compare the 50 V breakdown voltage and 100 mA current rating against circuit demands. Consider the VESM/SOT-723 package constraints for thermal management and PCB layout. Verify that the internal resistor values align with the desired input impedance and drive current capabilities of the controlling logic source.

Part Context

This part belongs to Toshiba's RN series of Bias Resistor Built-in Transistors. These devices combine single NPN or PNP transistors with one or two resistors to replace multiple discrete components. The RN2106 variant specifically integrates a 4.7 kΩ base resistor and a 47 kΩ emitter-base resistor, offering a fixed gain characteristic suitable for standard switching applications without external bias networks.

Replacement Considerations

Publicly confirmed substitute part numbers are not available in the provided data. Consult Toshiba's selection guide for equivalent RN series parts with matching resistor values or consult distributor cross-reference tools for compatible digital transistors with identical electrical ratings and pin configurations.