RN2106(T5L,F,T)

RN2106(T5L,F,T)

  • Description:TRANS PREBIAS PNP 50V 0.1A SSM
  • Series:-

SKU:73a3b1c140e2 Category: Brand:

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Product Detailed Parameters

  • Description:TRANS PREBIAS PNP 50V 0.1A SSM
  • Series:-
  • Mfr:Toshiba Semiconductor and Storage
  • Package:Tape & Reel (TR),Cut Tape (CT)
  • Resistors Included:R1 and R2
  • Transistor Type:PNP - Pre-Biased
  • Current - Collector (Ic) (Max):100 mA
  • Voltage - Collector Emitter Breakdown (Max):50 V
  • Resistor - Base (R1):4.7 kOhms
  • Resistor - Emitter Base (R2):47 kOhms
  • DC Current Gain (hFE) (Min) @ Ic, Vce:80 @ 10mA, 5V
  • Vce Saturation (Max) @ Ib, Ic:300mV @ 250µA, 5mA
  • Current - Collector Cutoff (Max):500nA
  • Frequency - Transition:200 MHz
  • Power - Max:100 mW
  • Grade:-
  • Qualification:-
  • Mounting Type:Surface Mount
  • Package / Case:SC-75, SOT-416
  • Supplier Device Package:SSM

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RN2106(T5L,F,T)

Overview

The RN2106(T5L,F,T) is a PNP digital transistor manufactured by Toshiba Semiconductor and Storage. It integrates a single PNP bipolar junction transistor with a built-in bias resistor network in an ES6 surface-mount package. The device features a collector-emitter breakdown voltage of 50V and a continuous collector current rating of 100mA. The typical DC current gain (hFE) is specified at a minimum of 70 under standard test conditions. The component operates within a temperature range of -40°C to +125°C and complies with RoHS3 standards.

Feature Summary

  • Integrates a PNP transistor with a built-in bias resistor for simplified circuit design
  • ES6 compact surface-mount package suitable for space-constrained applications
  • High input impedance characteristics due to integrated biasing

Applications

  • General-purpose switching circuits
  • Driver stages for logic interfaces
  • Level shifting applications

Procurement Notes

Verify the specific suffix T5L,F,T against official Toshiba documentation to confirm tape-and-reel packaging and lead-free composition. Confirm availability status as distribution data may vary. Ensure compliance with project-specific environmental regulations such as RoHS3 before finalizing procurement orders.

Selection Notes

Select this component when a PNP configuration with integrated biasing is required for switching or amplification tasks. Verify that the 50V collector-emitter voltage and 100mA current ratings exceed the maximum operational loads. Compare the ES6 package dimensions against PCB layout constraints to ensure mechanical compatibility.

Part Context

This part belongs to the RN210x series of digital transistors from Toshiba Semiconductor and Storage. These devices are designed to replace discrete resistor-transistor networks, reducing component count and board space. The series offers various resistance ratios and configurations for different logic interface requirements.

Replacement Considerations

Consult official Toshiba substitution guides for verified equivalents. Generic replacements must match the PNP configuration, 50V VCEO, 100mA IC, and ES6 package footprint. Verify internal resistor values and hFE ranges to ensure functional parity.

RN2106(T5L,F,T)RN2106(T5L,F,T)

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