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The RN2106(T5L,F,T) is a PNP digital transistor manufactured by Toshiba Semiconductor and Storage. It integrates a single PNP bipolar junction transistor with a built-in bias resistor network in an ES6 surface-mount package. The device features a collector-emitter breakdown voltage of 50V and a continuous collector current rating of 100mA. The typical DC current gain (hFE) is specified at a minimum of 70 under standard test conditions. The component operates within a temperature range of -40°C to +125°C and complies with RoHS3 standards.
Verify the specific suffix T5L,F,T against official Toshiba documentation to confirm tape-and-reel packaging and lead-free composition. Confirm availability status as distribution data may vary. Ensure compliance with project-specific environmental regulations such as RoHS3 before finalizing procurement orders.
Select this component when a PNP configuration with integrated biasing is required for switching or amplification tasks. Verify that the 50V collector-emitter voltage and 100mA current ratings exceed the maximum operational loads. Compare the ES6 package dimensions against PCB layout constraints to ensure mechanical compatibility.
This part belongs to the RN210x series of digital transistors from Toshiba Semiconductor and Storage. These devices are designed to replace discrete resistor-transistor networks, reducing component count and board space. The series offers various resistance ratios and configurations for different logic interface requirements.
Consult official Toshiba substitution guides for verified equivalents. Generic replacements must match the PNP configuration, 50V VCEO, 100mA IC, and ES6 package footprint. Verify internal resistor values and hFE ranges to ensure functional parity.