RN2107ACT(TPL3)

Overview

The RN2107ACT(TPL3) is a PNP bias resistor built-in transistor (BRT) manufactured by Toshiba Semiconductor and Storage. It integrates a single PNP bipolar junction transistor with two internal bias resistors in a compact surface-mount package. Key electrical specifications include a maximum collector-emitter voltage (Vceo) of 50 V, a continuous collector current (Ic) of 100 mA, and a maximum power dissipation of 100 mW. The device features a typical DC current gain (hFE) of 70 at Ic=10mA and Vce=-5V. Internal resistances are typically 10 kOhms for both the base resistor (R1) and emitter resistor (R2), resulting in a 1:1 resistance ratio. The transition frequency (fT) is rated at 200 MHz, supporting high-speed switching applications.

Feature Summary

• Integrates a PNP BJT with dual bias resistors to simplify circuit design and reduce component count.
• Provides consistent hFE characteristics due to integrated resistor matching within the monolithic structure.
• Designed for low-power surface-mount applications with a compact footprint suitable for dense PCB layouts.

Applications

• Switching circuits for general-purpose logic interfaces.
• Inverter circuits requiring level shifting or signal inversion.
• Driver circuits for small-signal loads or relay drivers.

Procurement Notes

Verify the exact suffix ACT(TPL3) against official Toshiba documentation to confirm pinout and electrical tolerances, as suffixes may indicate specific tape-and-reel packaging or quality grades. Ensure compatibility with RoHS directives if required by your manufacturing standards. Cross-reference the manufacturer part number with authorized distributors to confirm current availability and lead times, as supply chain status can vary.

Selection Notes

Select this component when a PNP digital transistor with a 1:1 bias resistor ratio is required. Verify that the 50V Vceo and 100mA Ic ratings exceed your circuit's maximum operating conditions. Consider the SC-88AB or similar small outline package dimensions for board space constraints. Compare hFE minimums and saturation voltages against alternative BRTs if strict gain linearity or low Vce(sat) is critical for your application.

Part Context

The RN2107 series belongs to Toshiba's broader family of Bias Resistor Built-in Transistors (BRTs), also known as digital transistors. These devices replace discrete resistor networks and individual transistors, offering improved reliability and reduced assembly costs. The RN2107 specifically denotes a PNP configuration with equal base and emitter resistors, distinguishing it from NPN variants or those with different resistance ratios like the RN2xxx series.

Replacement Considerations

Direct substitutes must match the PNP polarity, 50V Vceo, 100mA Ic, and 1:1 resistor ratio. Check equivalent parts from manufacturers like ROHM (e.g., DTA series) or ON Semiconductor (e.g., DMP series) for compatible packages and electrical parameters. Ensure the replacement maintains the same fT and power dissipation capabilities for thermal management equivalence.