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The RN2107,LXHF(CT is a PNP Bias Resistor Built-in Transistor (BRT) manufactured by Toshiba Semiconductor and Storage. It integrates a single PNP epitaxial planar transistor with internal bias resistors in an SSM-3 surface-mount package. The device features a collector-emitter voltage (VCEO) of -50 V and a continuous collector current (IC) of -100 mA. Typical input resistance values are 47 kOhms for the base resistor (R1) and 47 kOhms for the emitter-base resistor (R2). The component is qualified under AEC-Q101 standards for automotive applications, ensuring reliability in demanding environments. Maximum power dissipation is rated at 100 mW, with a maximum operating junction temperature of +150°C.
Verify the specific suffix LXHF(CT against the manufacturer's latest datasheet to confirm packaging details and tape-and-reel specifications. Ensure that the AEC-Q101 qualification status aligns with your project's automotive reliability requirements. Cross-reference the part number with official Toshiba distributors to confirm current availability and authenticity before procurement.
Select this component when a PNP digital transistor with 47kOhm bias resistors is required for automotive-grade switching applications. Compare the -50V VCEO and -100mA IC ratings against the load requirements. Consider the SSM-3 package dimensions for PCB layout constraints. Verify thermal management needs given the 100mW power dissipation limit in enclosed spaces.
This part belongs to Toshiba's RN series of Bias Resistor Built-in Transistors, designed to replace discrete resistor-transistor networks. The LXHF variant indicates specific automotive-grade packaging and material compliance. It serves as a direct replacement for older discrete PNP configurations in automotive electronics, offering improved consistency and reduced assembly complexity.
Check for compatible substitutes within the RN21xx series or equivalent AEC-Q101 qualified PNP BRTs from other manufacturers. Ensure pinout compatibility with the SSM-3 footprint. Verify that alternative parts meet the same -50V VCEO and -100mA IC specifications without requiring circuit redesign.