RN2107,LXHF(CT

RN2107,LXHF(CT

$0.25
  • Description:TRANS PREBIAS PNP 50V 0.1A SSM
  • Series:-

SKU:ecaf9fd0465f Category: Brand:

  
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Product Detailed Parameters

  • Description:TRANS PREBIAS PNP 50V 0.1A SSM
  • Series:-
  • Mfr:Toshiba Semiconductor and Storage
  • Package:Tape & Reel (TR),Cut Tape (CT)
  • Resistors Included:R1 and R2
  • Transistor Type:PNP - Pre-Biased
  • Current - Collector (Ic) (Max):100 mA
  • Voltage - Collector Emitter Breakdown (Max):50 V
  • Resistor - Base (R1):10 kOhms
  • Resistor - Emitter Base (R2):47 kOhms
  • DC Current Gain (hFE) (Min) @ Ic, Vce:80 @ 10mA, 5V
  • Vce Saturation (Max) @ Ib, Ic:300mV @ 250µA, 5mA
  • Current - Collector Cutoff (Max):500nA
  • Frequency - Transition:200 MHz
  • Power - Max:100 mW
  • Grade:Automotive
  • Qualification:AEC-Q101
  • Mounting Type:Surface Mount
  • Package / Case:SC-75, SOT-416
  • Supplier Device Package:SSM

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RN2107,LXHF(CT

Overview

The RN2107,LXHF(CT is a PNP Bias Resistor Built-in Transistor (BRT) manufactured by Toshiba Semiconductor and Storage. It integrates a single PNP epitaxial planar transistor with internal bias resistors in an SSM-3 surface-mount package. The device features a collector-emitter voltage (VCEO) of -50 V and a continuous collector current (IC) of -100 mA. Typical input resistance values are 47 kOhms for the base resistor (R1) and 47 kOhms for the emitter-base resistor (R2). The component is qualified under AEC-Q101 standards for automotive applications, ensuring reliability in demanding environments. Maximum power dissipation is rated at 100 mW, with a maximum operating junction temperature of +150°C.

Feature Summary

  • Integrates a PNP transistor with dual internal bias resistors to simplify circuit design and reduce component count.
  • Qualified for automotive applications under AEC-Q101 standards, ensuring high reliability and stability.
  • Utilizes an SSM-3 surface-mount package for compact board space utilization and automated assembly compatibility.

Applications

  • Automotive interface circuits and logic level shifting
  • Switching applications in automotive control modules
  • Driver circuits for low-power loads in vehicle electronics

Procurement Notes

Verify the specific suffix LXHF(CT against the manufacturer's latest datasheet to confirm packaging details and tape-and-reel specifications. Ensure that the AEC-Q101 qualification status aligns with your project's automotive reliability requirements. Cross-reference the part number with official Toshiba distributors to confirm current availability and authenticity before procurement.

Selection Notes

Select this component when a PNP digital transistor with 47kOhm bias resistors is required for automotive-grade switching applications. Compare the -50V VCEO and -100mA IC ratings against the load requirements. Consider the SSM-3 package dimensions for PCB layout constraints. Verify thermal management needs given the 100mW power dissipation limit in enclosed spaces.

Part Context

This part belongs to Toshiba's RN series of Bias Resistor Built-in Transistors, designed to replace discrete resistor-transistor networks. The LXHF variant indicates specific automotive-grade packaging and material compliance. It serves as a direct replacement for older discrete PNP configurations in automotive electronics, offering improved consistency and reduced assembly complexity.

Replacement Considerations

Check for compatible substitutes within the RN21xx series or equivalent AEC-Q101 qualified PNP BRTs from other manufacturers. Ensure pinout compatibility with the SSM-3 footprint. Verify that alternative parts meet the same -50V VCEO and -100mA IC specifications without requiring circuit redesign.

RN2107,LXHF(CTRN2107,LXHF(CT
$0.25
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