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The RN2107MFV,L3F(CT is a pre-biased NPN digital transistor manufactured by Toshiba Semiconductor and Storage. It integrates an NPN bipolar junction transistor with bias resistors in a single SOT-723 (VESM) package. Key electrical specifications include a maximum collector-emitter voltage of 50 V, a continuous collector current of 100 mA, and a power dissipation rating of 150 mW. The internal resistor configuration consists of a base resistor (R1) of 47 kOhms and an emitter-base resistor (R2) of 47 kOhms. The device meets AEC-Q101 automotive qualification standards.
Verify the specific ordering suffix against the manufacturer's official datasheet to confirm package type and tape-and-reel specifications. Ensure the component matches the required AEC-Q101 qualification status if used in automotive designs. Cross-reference the part number with authorized distributors to confirm availability and authenticity before procurement.
Select this component when a compact NPN switching solution with integrated biasing is required. Verify that the 50 V voltage rating and 100 mA current capacity meet the load requirements. Confirm that the 47k/47k resistor ratio provides appropriate drive characteristics for the input logic levels. Ensure the SOT-723 footprint aligns with the PCB layout constraints.
This part belongs to Toshiba's RN series of bias resistor built-in transistors, commonly referred to as digital transistors. These devices are designed to replace discrete BJT and resistor networks, offering reduced board space and simplified assembly. The RN2107 variant specifically denotes an NPN configuration with equal base and emitter-base resistance values.
Consult Toshiba's official cross-reference documentation or equivalent manufacturer catalogs for verified substitutes. Ensure any replacement maintains identical pinout, voltage ratings, current capabilities, and resistor ratios. Automotive applications require replacements that also hold AEC-Q101 certification.