RN2107MFV,L3XHF(CT

Overview

The RN2107MFV,L3XHF(CT is a PNP bias resistor built-in transistor (BRT) manufactured by Toshiba Semiconductor and Storage. It integrates a single PNP silicon small-signal transistor with internal bias resistors in a compact SOT-723 (VESM) surface-mount package. The device features a maximum collector-emitter voltage (Vceo) of 50 V and a continuous collector current (Ic) of 100 mA. Key electrical parameters include a minimum DC current gain (hFE) of 70, a maximum collector cutoff current of 500 nA, and a power dissipation rating of 150 mW. The typical input resistance is 47 kOhms, with an internal resistor ratio of 1. It operates within a temperature range of -55°C to +150°C.

Feature Summary

• Integrates a PNP transistor with built-in bias resistors to simplify circuit design and reduce component count.
• Utilizes the VESM (SOT-723) surface-mount package for space-efficient PCB layout.
• Engineered for high thermal stability with a maximum operating junction temperature of 150°C.

Applications

• General-purpose switching applications in consumer electronics.
• Driver circuits for low-power loads in industrial control systems.
• Logic level translation and interface buffering in digital circuits.

Procurement Notes

Verify the exact ordering code suffix, as variations such as L3F or L3XHF may indicate specific tape-and-reel packaging configurations or regional distribution channels. Confirm AEC-Q101 qualification status if automotive compliance is required, as this depends on the specific manufacturing lot and suffix designation. Ensure the supplier provides official datasheets matching the precise part number variant to guarantee parameter accuracy.

Selection Notes

Select this component when a PNP configuration with integrated biasing is required for general-purpose switching. Compare the 47 kOhm input resistance against other variants like RN2103 or RN2105 if different base drive characteristics are needed. Verify that the 50 V voltage rating and 100 mA current capacity meet the load requirements. Consider the SOT-723 footprint constraints during PCB layout planning.

Part Context

This component belongs to Toshiba's Bias Resistor Built-in Transistor (BRT) family, which combines transistors and resistors to replace multiple discrete components. The RN21xx series specifically denotes PNP polarity, while the suffix indicates the internal resistor values and package type. These devices are designed to streamline digital logic interfaces and reduce assembly costs in mass-produced electronic equipment.

Replacement Considerations

Direct complementary substitutes include NPN variants such as RN1107MFV for opposite polarity needs. Other PNP BRTs from Toshiba with similar Vceo and Ic ratings, such as RN2103 or RN2105, may serve as alternatives if resistor ratios differ. Cross-brand replacements require careful verification of pinout compatibility and electrical limits.