RN2108ACT(TPL3)

RN2108ACT(TPL3)

  • Description:TRANS PREBIAS PNP 50V 0.08A CST3
  • Series:-

SKU:5b2df7bac91f Category: Brand:

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Product Detailed Parameters

  • Description:TRANS PREBIAS PNP 50V 0.08A CST3
  • Series:-
  • Mfr:Toshiba Semiconductor and Storage
  • Package:Cut Tape (CT)
  • Resistors Included:R1 and R2
  • Transistor Type:PNP - Pre-Biased
  • Current - Collector (Ic) (Max):80 mA
  • Voltage - Collector Emitter Breakdown (Max):50 V
  • Resistor - Base (R1):22 kOhms
  • Resistor - Emitter Base (R2):47 kOhms
  • DC Current Gain (hFE) (Min) @ Ic, Vce:80 @ 10mA, 5V
  • Vce Saturation (Max) @ Ib, Ic:150mV @ 250µA, 5mA
  • Current - Collector Cutoff (Max):500nA
  • Frequency - Transition:-
  • Power - Max:100 mW
  • Grade:-
  • Qualification:-
  • Mounting Type:Surface Mount
  • Package / Case:SC-101, SOT-883
  • Supplier Device Package:CST3

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RN2108ACT(TPL3)

Overview

The RN2108ACT(TPL3) is a PNP bias resistor built-in transistor manufactured by Toshiba Semiconductor and Storage. It integrates a single PNP bipolar junction transistor with two internal base resistors within an SC-70 surface-mount package. The device supports a maximum collector-emitter voltage of 50 V and a continuous collector current of 100 mA. Key electrical specifications include a DC current gain (hFE) of at least 100 at 10 mA and 5 V, a saturation voltage of 300 mV maximum at 250 µA base current and 5 mA collector current, and a transition frequency of 200 MHz. Power dissipation is rated at 100 mW.

Feature Summary

  • Integrates a PNP transistor with dual internal bias resistors to reduce external component count and PCB area.
  • Optimized for high-speed switching applications with a transition frequency of 200 MHz.
  • Features low saturation voltage characteristics suitable for driver and interface circuits.

Applications

  • Switching circuits in consumer electronics
  • Inverter circuit drivers
  • Interface connection logic level shifting
  • Driver circuits for small loads

Procurement Notes

Verify the specific suffix ACT(TPL3) against official Toshiba documentation to confirm tape and reel packaging and lead-free status. Ensure compatibility with SC-70 footprint dimensions during procurement planning. Confirm availability through authorized distributors as standard delivery times may vary based on manufacturing schedules.

Selection Notes

Select this component when a compact PNP solution with integrated biasing is required for space-constrained designs. Compare hFE and saturation voltage requirements against load conditions. Verify that the 50 V breakdown voltage and 100 mA current rating exceed the maximum operational stresses in the target application circuit.

Part Context

This part belongs to the RN series of bias resistor built-in transistors from Toshiba. These devices are designed to replace discrete transistor-resistor networks, simplifying schematic design and assembly processes. The SC-70 package offers a small form factor ideal for portable and miniaturized electronic equipment.

Replacement Considerations

Check for direct equivalents such as the RN2108 series variants from other manufacturers or alternative Toshiba packages like SOT-323 if pinout compatibility allows. Verify that substitute components match the 50 V rating, 100 mA current capacity, and SC-70 footprint dimensions.

RN2108ACT(TPL3)RN2108ACT(TPL3)

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