SEARCH
— IC芯片 | 连接器 | 传感器 | 被动器件 —
The RN2108ACT(TPL3) is a PNP bias resistor built-in transistor manufactured by Toshiba Semiconductor and Storage. It integrates a single PNP bipolar junction transistor with two internal base resistors within an SC-70 surface-mount package. The device supports a maximum collector-emitter voltage of 50 V and a continuous collector current of 100 mA. Key electrical specifications include a DC current gain (hFE) of at least 100 at 10 mA and 5 V, a saturation voltage of 300 mV maximum at 250 µA base current and 5 mA collector current, and a transition frequency of 200 MHz. Power dissipation is rated at 100 mW.
Verify the specific suffix ACT(TPL3) against official Toshiba documentation to confirm tape and reel packaging and lead-free status. Ensure compatibility with SC-70 footprint dimensions during procurement planning. Confirm availability through authorized distributors as standard delivery times may vary based on manufacturing schedules.
Select this component when a compact PNP solution with integrated biasing is required for space-constrained designs. Compare hFE and saturation voltage requirements against load conditions. Verify that the 50 V breakdown voltage and 100 mA current rating exceed the maximum operational stresses in the target application circuit.
This part belongs to the RN series of bias resistor built-in transistors from Toshiba. These devices are designed to replace discrete transistor-resistor networks, simplifying schematic design and assembly processes. The SC-70 package offers a small form factor ideal for portable and miniaturized electronic equipment.
Check for direct equivalents such as the RN2108 series variants from other manufacturers or alternative Toshiba packages like SOT-323 if pinout compatibility allows. Verify that substitute components match the 50 V rating, 100 mA current capacity, and SC-70 footprint dimensions.