RN2108,LF(CT

RN2108,LF(CT

$0.15
  • Description:TRANS PREBIAS PNP 50V 0.1A SSM
  • Series:-

SKU:5ac224618841 Category: Brand:

  
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Product Detailed Parameters

  • Description:TRANS PREBIAS PNP 50V 0.1A SSM
  • Series:-
  • Mfr:Toshiba Semiconductor and Storage
  • Package:Tape & Reel (TR),Cut Tape (CT)
  • Resistors Included:R1 and R2
  • Transistor Type:PNP - Pre-Biased
  • Current - Collector (Ic) (Max):100 mA
  • Voltage - Collector Emitter Breakdown (Max):50 V
  • Resistor - Base (R1):22 kOhms
  • Resistor - Emitter Base (R2):47 kOhms
  • DC Current Gain (hFE) (Min) @ Ic, Vce:80 @ 10mA, 5V
  • Vce Saturation (Max) @ Ib, Ic:300mV @ 250µA, 5mA
  • Current - Collector Cutoff (Max):500nA
  • Frequency - Transition:200 MHz
  • Power - Max:100 mW
  • Grade:-
  • Qualification:-
  • Mounting Type:Surface Mount
  • Package / Case:SC-75, SOT-416
  • Supplier Device Package:SSM

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RN2108,LF(CT

Overview

The RN2108,LF(CT is a single PNP pre-biased bipolar junction transistor manufactured by Toshiba Semiconductor and Storage. It integrates two internal bias resistors with values of 22 kOhms and 47 kOhms to simplify circuit design. The device features a collector-emitter breakdown voltage of 50 V and a maximum collector current of 100 mA. It operates with a transition frequency of 200 MHz and a maximum power dissipation of 100 mW. Packaged in the surface-mount SSM (SC-75, SOT-416) format, it offers a DC current gain of 50 at 10 mA and 5 V, with a saturated voltage drop of 300 mV under specified conditions.

Feature Summary

  • Integrates dual bias resistors (22 kOhm and 47 kOhm) for simplified circuit design
  • Single PNP pre-biased configuration within a compact surface-mount package
  • Optimized for high-speed switching applications with 200 MHz transition frequency

Applications

  • Switching circuits
  • Inverter circuits
  • Interface circuits
  • Driver circuits

Procurement Notes

Verify the specific suffix LF(CT) to ensure compliance with RoHS3 standards and lead-free processing requirements. Confirm the SSM package type matches the PCB footprint. Check datasheet limits for thermal management given the 100 mW power rating. Ensure ordering quantities align with standard reel sizes or cut tape availability from authorized distributors.

Selection Notes

Select this component when a PNP digital transistor with integrated biasing is required for space-constrained designs. The 22 kOhm and 47 kOhm resistor values are fixed; verify they suit the drive current needs. Consider the 50 V voltage rating for low-voltage logic interfaces. Compare against other RN21xx series variants if different resistance ratios or NPN polarity are needed.

Part Context

This part belongs to Toshiba’s RN21xx series of Bipolar Pre-Biased / Digital Transistors. These components combine a single BJT with built-in bias resistors to reduce external component count. The series supports various configurations for both PNP and NPN types, widely used in consumer electronics and industrial control systems where board space and assembly complexity are critical factors.

Replacement Considerations

Direct substitutes include other RN2108 variants from Toshiba, such as RN2108(T5LFT). Cross-manufacturer equivalents require matching PNP polarity, 50 V Vceo, 100 mA Ic, and similar internal resistance values (22 kOhm/47 kOhm). Verify package compatibility (SSM/SOT-416) and electrical characteristics before substitution.

RN2108,LF(CTRN2108,LF(CT
$0.15
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