RN2108,LXHF(CT

Overview

The RN2108,LXHF(CT is a PNP Bias Resistor Built-in Transistor (BRT) from Toshiba, housed in an SSM-3 (SOT-416) surface-mount package. It integrates a single PNP transistor with internal bias resistors of 22 kΩ and 47 kΩ. Key electrical parameters include a maximum collector-emitter voltage (VCEO) of -50 V, a continuous collector current (IC) of -100 mA, and a power dissipation (Pd) of 100 mW. The device supports a maximum operating frequency of 200 MHz and features a minimum DC current gain (hFE) of 70 at -10 mA and -5 V. It is qualified under AEC-Q200 standards for automotive applications.

Feature Summary

• Integrates a PNP transistor with dual internal bias resistors to simplify circuit design.
• Qualified for automotive use under AEC-Q200 reliability standards.
• Optimized for high-speed switching with a maximum operating frequency of 200 MHz.
• Designed for surface-mount assembly in compact SSM-3 packages.

Applications

• Automotive electronic control units requiring reliable switching components.
• General-purpose logic circuits utilizing built-in biasing.
• Power supply management systems needing compact transistor solutions.
• RF signal processing applications within specified frequency limits.

Procurement Notes

Verify the specific suffix configuration against the official Toshiba datasheet to ensure correct resistor values and packaging options. Confirm AEC-Q200 qualification status if automotive compliance is required. Check RoHS compliance documentation for environmental regulations. Ensure the ordering code matches the desired reel or cut-tape quantity specifications provided by the manufacturer.

Selection Notes

Select this component when a PNP BRT with integrated biasing is needed for space-constrained designs. Consider the 200 MHz frequency limit for high-speed applications. Evaluate the -50 V voltage rating against circuit requirements. Compare hFE characteristics with alternative models if specific gain thresholds are critical for the application.

Part Context

This part belongs to Toshiba's RN series of Bias Resistor Built-in Transistors. These devices combine transistors and resistors to reduce board space and assembly costs. The RN2108 variant specifically targets general-purpose and automotive markets, offering a balance of performance and reliability in a small footprint suitable for modern electronics.

Replacement Considerations

Check for direct substitutes within the RN210x series with different resistor ratios. Verify pin compatibility and thermal characteristics before replacing with other manufacturers' BRTs. Ensure voltage and current ratings meet or exceed original specifications.