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The RN2108MFV,L3F is a PNP bias resistor built-in transistor (digital transistor) manufactured by Toshiba Semiconductor and Storage. It integrates a single base resistor (R1) with a value of 47 kOhms into a compact SOT-723 surface-mount package, also designated as VESM. The device supports a maximum collector-emitter voltage (Vceo) of 50 V and a continuous collector current (Ic) of 100 mA. With a maximum power dissipation of 150 mW and a minimum DC current gain (hFE) of 120 at 1 mA and 5 V, it provides efficient switching capabilities in a small form factor suitable for space-constrained electronic designs.
Verify the complete part number including the suffix L3F to ensure correct packaging configuration. Confirm RoHS compliance and AEC-Q101 qualification status if automotive applications are required. Cross-reference the manufacturer's latest datasheet for any updates on reliability test reports or recommended soldering profiles specific to the VESM package.
Select this component when a PNP digital transistor with a 47 kOhm input resistance is required. Ensure the application voltage does not exceed 50 V and the load current remains within the 100 mA limit. Consider the 150 mW power dissipation rating relative to the thermal environment of the final assembly to maintain safe operating temperatures.
This component belongs to the RN21xx series of PNP bias resistor built-in transistors from Toshiba. The series offers various base resistor values to accommodate different drive requirements while maintaining consistent electrical performance. The RN2108 variant specifically features a 47 kOhm resistor, distinguishing it from other series members with different resistance ratios.
Direct substitutes include other PNP digital transistors with similar 47 kOhm base resistance and SOT-723 packaging. Verify pinout compatibility and electrical parameters such as Vceo and Ic before substitution. Alternative packages may require schematic and layout modifications.