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The RN2108(T5L,F,T) is a dual NPN pre-biased transistor array manufactured by Toshiba Semiconductor and Storage. It integrates two NPN transistors with built-in bias resistors in a compact US6 surface-mount package. The device supports a maximum collector-emitter voltage of 50V and a continuous collector current of 100mA. Key electrical characteristics include a DC current gain (hFE) of at least 80 at 10mA and 5V, with a saturation voltage of 300mV maximum at 250µA base current and 5mA collector current. The unit features a transition frequency of 200MHz and a power dissipation rating of 200mW. Internal resistor values are typically 2.2kΩ for the base and 47kΩ for the emitter.
Verify the specific suffix configuration when ordering, as variations such as T5L or LF may indicate different tape-and-reel specifications or environmental compliance levels. Confirm availability through authorized distributors, as standard lead times can vary. Ensure the selected packaging format matches the assembly requirements for the production line.
Select this component when a dual NPN configuration with integrated biasing is required to minimize board space and assembly complexity. Compare the 2.2kΩ base and 47kΩ emitter resistor ratios against alternative models if specific drive currents differ. Verify that the 50V voltage rating and 100mA current capacity meet the load requirements of the target application.
This part belongs to the RN2901-06 series of digital transistors from Toshiba. It shares similar electrical parameters and package types with other members of the family, such as the RN2905 PNP variant. The series is designed for general-purpose switching applications where compact size and simplified biasing networks are prioritized over discrete component flexibility.
Direct substitutes within the same series include the RN2905 for PNP configurations. Cross-manufacturer equivalents should be verified for pin compatibility and electrical parameter alignment, particularly the hFE and Vce(sat) values, before implementation.