RN2109,LF(CT

Overview

The RN2109,LF(CT is a dual pre-biased NPN transistor array manufactured by Toshiba Semiconductor and Storage. It integrates two NPN transistors with built-in bias resistors in a compact surface-mount package. Key electrical specifications include a maximum collector current of 100mA and a collector-emitter breakdown voltage of 50V. The device features a transition frequency of 200MHz and a maximum power dissipation of 100mW. DC current gain (hFE) is specified at a minimum of 70 at 10mA and 5V. The saturation voltage is limited to 300mV at 250µA base current and 5mA collector current. The component utilizes the USV supplier device package.

Feature Summary

• Integrates dual NPN transistors with built-in bias resistors for simplified circuit design
• Provides high-speed switching capability with a 200MHz transition frequency
• Offers low saturation voltage for efficient signal processing
• Utilizes a compact surface-mount package for space-constrained applications

Applications

• Switching circuits requiring fast response times
• Inverter circuits for digital logic interfaces
• Driver circuits for low-power loads
• Interface circuits between microcontrollers and peripheral devices

Procurement Notes

Verify the specific suffix LF(CT) against the manufacturer's official documentation to confirm packaging type and compliance status. Ensure that the ordering information matches the exact part number required for your bill of materials. Cross-reference with authorized distributors to confirm availability and authenticity. Check for any recent product change notices that may affect pinout or electrical characteristics.

Selection Notes

Select this component when a dual NPN configuration with integrated biasing is required to reduce external component count. Consider the 100mA current rating and 50V voltage limit for suitability in low-to-medium power switching applications. Evaluate the 200MHz frequency response against the system's signal requirements. Compare the USV package dimensions with available PCB real estate constraints.

Part Context

This component belongs to Toshiba's RN series of pre-biased transistors, which are designed to replace discrete resistor-transistor networks. These arrays simplify schematic design and reduce assembly costs by integrating multiple components into a single package. The RN2109 specifically provides a dual NPN configuration, offering a complementary solution to PNP-only or single-transistor variants within the same family.

Replacement Considerations

Publicly confirmed substitute part numbers for RN2109,LF(CT were not found in the provided source material. Verify compatibility with alternative dual NPN pre-biased arrays from other manufacturers based on pinout, electrical ratings, and package dimensions before substitution.