RN2109,LXHF(CT

RN2109,LXHF(CT

$0.26
  • Description:TRANS PREBIAS PNP 50V 0.1A SSM
  • Series:-

SKU:a6dc2d818a35 Category: Brand:

  
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Product Detailed Parameters

  • Description:TRANS PREBIAS PNP 50V 0.1A SSM
  • Series:-
  • Mfr:Toshiba Semiconductor and Storage
  • Package:Tape & Reel (TR),Cut Tape (CT)
  • Resistors Included:R1 and R2
  • Transistor Type:PNP - Pre-Biased
  • Current - Collector (Ic) (Max):100 mA
  • Voltage - Collector Emitter Breakdown (Max):50 V
  • Resistor - Base (R1):47 kOhms
  • Resistor - Emitter Base (R2):22 kOhms
  • DC Current Gain (hFE) (Min) @ Ic, Vce:70 @ 10mA, 5V
  • Vce Saturation (Max) @ Ib, Ic:300mV @ 250µA, 5mA
  • Current - Collector Cutoff (Max):500nA
  • Frequency - Transition:200 MHz
  • Power - Max:100 mW
  • Grade:Automotive
  • Qualification:AEC-Q101
  • Mounting Type:Surface Mount
  • Package / Case:SC-75, SOT-416
  • Supplier Device Package:SSM

Download product information

RN2109,LXHF(CT

Overview

The RN2109 is a pre-biased NPN transistor manufactured by Toshiba Semiconductor and Storage. It integrates a single NPN bipolar junction transistor with two built-in bias resistors in a compact SOT-323 surface-mount package. This configuration simplifies circuit design by reducing component count and board space requirements. The device features a collector-emitter voltage rating of 50V and a continuous collector current capacity of 100mA. Internal resistor values are typically configured to provide a base drive suitable for switching applications, ensuring reliable operation across standard industrial temperature ranges.

Feature Summary

  • Integrated dual bias resistors eliminate external components
  • Compact SOT-323 footprint optimizes board space
  • Simplified circuit design reduces assembly complexity

Applications

  • General-purpose switching circuits
  • Driver stages for small signal loads
  • Logic level translation interfaces

Procurement Notes

Verify the exact suffix LXHF(CT against official Toshiba documentation to confirm tape-and-reel specifications and moisture sensitivity levels. Ensure the ordering code matches the required binning for hFE and VBE characteristics. Cross-reference the manufacturer's latest datasheet revision to confirm pinout consistency and recommended soldering profiles for the SOT-323 package.

Selection Notes

Select this component when space constraints necessitate an integrated bias solution. Confirm that the internal resistor values align with the driving logic voltage levels. Verify thermal dissipation requirements within the SOT-323 package limits for the intended duty cycle. Ensure the 50V breakdown voltage exceeds the maximum circuit operating voltage with adequate margin.

Part Context

This part belongs to Toshiba's RN series of pre-biased transistors, designed for high-density electronics. The RN2109 variant specifically offers NPN configuration with defined resistance ratios. It serves as a direct replacement for discrete resistor-transistor networks in consumer and industrial control boards where miniaturization is critical.

Replacement Considerations

  • RN2109T146F
  • RN2109T106F

FAQ

What is the typical internal resistor configuration?

The RN2109 typically integrates two bias resistors connected to the base, though specific resistance values should be confirmed via the official electrical characteristics table.

Is the SOT-323 package suitable for high-power applications?

No, the SOT-323 package has limited thermal dissipation capabilities and is intended for low-power switching and signal processing tasks.

RN2109,LXHF(CTRN2109,LXHF(CT
$0.26
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