RN2109MFV,L3F

Overview

The RN2109MFV,L3F is a PNP bias resistor built-in transistor (BRT) manufactured by Toshiba Semiconductor and Storage. It integrates a single PNP bipolar junction transistor with internal bias resistors in a compact SOT-723 (VESM) surface-mount package. Key electrical specifications include a maximum collector-emitter voltage (VCEO) of 50 V, a continuous collector current (IC) of 100 mA, and a maximum power dissipation (Pd) of 150 mW. The device features an internal base resistor (R1) of 4.7 kOhms and an emitter-base resistor (R2) of 10 kOhms. It has a minimum DC current gain (hFE) of 60 at IC=10mA and VCE=-5V, with a transition frequency (fT) of 250 MHz.

Feature Summary

• Integrates a PNP BJT with dual bias resistors to simplify circuit design and reduce component count.
• Optimized for high-speed switching applications with a transition frequency of 250 MHz.
• Automotive-grade reliability with AEC-Q101 qualification for robust performance in harsh environments.

Applications

• Switching circuits in automotive electronic control units (ECUs).
• Interface connections between microcontrollers and peripheral devices.
• Driver circuits for low-power loads in industrial automation systems.

Procurement Notes

Verify the specific suffix L3F against the manufacturer's latest datasheet to confirm packaging details and compliance status. Check for obsolescence notices as this component family may have lifecycle restrictions. Ensure the ordering quantity aligns with the reel size specified in the official procurement documentation.

Selection Notes

Select this part for PNP switching applications requiring integrated biasing in a small footprint. Compare the 4.7 kOhm input resistance against other RN21xx series variants if different drive currents are needed. Confirm that the 50 V rating and 100 mA current capacity meet the load requirements of the target application circuit.

Part Context

This component belongs to Toshiba's RN11xx/RN21xx series of Bias Resistor Built-in Transistors. These devices are designed to replace discrete resistor-transistor networks, offering space savings and improved consistency in digital switching applications across consumer, industrial, and automotive sectors.

Replacement Considerations

Direct complementary substitutes include the NPN variant RN1109MFV,L3F. Other compatible parts within the same series with similar electrical characteristics should be verified against the official replacement guide before substitution.

FAQ

What is the internal resistor configuration for the RN2109MFV?

The device contains a base resistor (R1) of 4.7 kOhms and an emitter-base resistor (R2) of 10 kOhms connected internally to the PNP transistor.

Is the RN2109MFV qualified for automotive applications?

Yes, the RN2109MFV is AEC-Q101 qualified, making it suitable for use in automotive electronic systems.

What is the maximum power dissipation of this transistor?

The maximum power dissipation (Pd) is 150 mW under standard operating conditions.