ChipApex | Global Electronic Components Supplier
SEARCH
Search Product
Search Post
— IC芯片 | 连接器 | 传感器 | 被动器件 —
Consult the customer manager about the wholesale price.
consultation hotline：86-132-6715-2157
email：[email protected]
Contact the product manager for consultation. One-stop consultation is available.
Do you want a lower wholesale price? Please send us your inquiry and we will reply immediately.
Product Detailed Parameters
- Description：TRANS PREBIAS PNP 50V 0.1A SSM
- Series：-
- Mfr：Toshiba Semiconductor and Storage
- Package：Tape & Reel (TR),Cut Tape (CT)
- Resistors Included：R1 Only
- Transistor Type：PNP - Pre-Biased
- Current - Collector (Ic) (Max)：100 mA
- Voltage - Collector Emitter Breakdown (Max)：50 V
- Resistor - Base (R1)：4.7 kOhms
- Resistor - Emitter Base (R2)：-
- DC Current Gain (hFE) (Min) @ Ic, Vce：120 @ 1mA, 5V
- Vce Saturation (Max) @ Ib, Ic：300mV @ 250µA, 5mA
- Current - Collector Cutoff (Max)：100nA (ICBO)
- Frequency - Transition：200 MHz
- Power - Max：100 mW
- Grade：-
- Qualification：-
- Mounting Type：Surface Mount
- Package / Case：SC-75, SOT-416
- Supplier Device Package：SSM
Download product information
Overview
The RN2110,LF(CT is a pre-biased PNP bipolar junction transistor manufactured by Toshiba Semiconductor and Storage. It features an integrated bias resistor network within an SSM (SC-75, SOT-416) surface-mount package. Key electrical parameters include a collector-emitter voltage of 50 V, a continuous collector current of 100 mA, and a maximum power dissipation of 100 mW. The device incorporates a base resistor of 4.7 kOhms and an emitter-base resistor of 4.7 kOhms. It exhibits a DC current gain of at least 50 at 10 mA and 5 V, with a saturation voltage of 300 mV max at 250 µA base current and 5 mA collector current. The transition frequency is rated at 200 MHz.
Feature Summary
- Integrates dual bias resistors to simplify circuit design and reduce component count.
- Optimized for high-speed switching applications with a 200 MHz transition frequency.
- Compact SSM surface-mount package suitable for space-constrained designs.
Applications
- Switching circuits
- Inverter circuits
- Interface circuits
- Driver circuits
Procurement Notes
Verify the specific suffix configuration against the official Toshiba datasheet to ensure compatibility with the required resistance values and package type. Confirm RoHS compliance status and moisture sensitivity level requirements prior to integration into the manufacturing process. Ensure ordering quantities align with standard reel or cut-tape availability constraints defined by the distributor.
Selection Notes
Select this component when a PNP digital transistor with 4.7 kOhm bias resistors is required. Consider the 50 V rating and 100 mA current limit for appropriate load handling. Evaluate thermal management needs given the 100 mW power dissipation in the small SSM package. Compare against alternative part numbers if different resistance ratios or higher current capabilities are necessary for the specific application.
Part Context
This component belongs to Toshiba's RN series of pre-biased transistors, designed to replace discrete resistor-transistor networks. The RN2110 variant specifically utilizes equal 4.7 kOhm resistors for both base and emitter connections. It is part of a broader family including variants like RN2102 and RN2104, differentiated primarily by internal resistance values and specific application optimizations.
Replacement Considerations
- RN2110(T5LFT)CT
FAQ
What are the internal resistor values for the RN2110?
The RN2110 includes a base resistor (R1) of 4.7 kOhms and an emitter-base resistor (R2) of 4.7 kOhms.
What is the maximum power dissipation of this transistor?
The maximum power dissipation is 100 mW.
