RN2110,LXHF(CT

Overview

The RN2110,LXHF(CT is a dual NPN pre-biased transistor array manufactured by Toshiba Semiconductor and Storage. It integrates two NPN transistors with built-in bias resistors in an ES6 surface-mount package. Key electrical specifications include a maximum collector-emitter voltage (Vceo) of 50V, a continuous collector current (Ic) of 100mA, and a DC current gain (hFE) minimum of 120 at 10mA and 5V. The device features a base resistor (R1) of 4.7kΩ, a transition frequency of 250MHz, and a maximum power dissipation of 200mW. It is qualified under the AEC-Q101 standard for automotive applications.

Feature Summary

• Integrated dual NPN configuration with built-in bias resistors simplifies circuit design by reducing component count.
• Automotive-grade qualification ensures reliability and performance stability in demanding vehicle environments.
• High-speed switching capability supported by a 250MHz transition frequency for efficient signal processing.

Applications

• Switching circuits in automotive electronic control units
• Inverter driver circuits for motor control systems
• Interface connection buffers between logic levels
• General-purpose digital switching applications requiring high reliability

Procurement Notes

Verify the specific ordering suffix and packaging type against the manufacturer's official datasheet to ensure compatibility with automated assembly processes. Confirm that the AEC-Q101 qualification status meets the specific automotive grade requirements of the target application before finalizing procurement decisions.

Selection Notes

Select this component when a dual NPN configuration with integrated biasing is required in a compact surface-mount footprint. Ensure the 50V voltage rating and 100mA current capacity align with the load requirements. Consider the 200mW power dissipation limit and thermal management needs for the chosen PCB layout.

Part Context

This part belongs to Toshiba's RN series of pre-biased transistors, which are designed to replace discrete resistor-transistor networks. The RN2110 specifically offers a dual NPN arrangement, providing a space-saving alternative to individual components while maintaining consistent electrical characteristics across production batches.

Replacement Considerations

Direct substitutes may include other dual NPN pre-biased transistors with similar pinouts and electrical ratings, such as the RN1910 series variants or equivalent offerings from other manufacturers like ROHM or ON Semiconductor, provided they match the ES6 package and AEC-Q101 qualification.