RN2110MFV,L3F

Overview

The RN2110MFV,L3F is a PNP epitaxial planar silicon transistor with built-in bias resistors, manufactured using Toshiba's PCT process. It features an ultra-small SOT-723 (VESM) package measuring 1.2 x 1.2 x 0.5 mm, suitable for high-density mounting. The device has a maximum collector-emitter voltage of -50 V and a continuous collector current of -100 mA. The internal base resistor (R1) is nominally 4.7 kΩ. Key electrical characteristics include a DC current gain (hFE) range of 120 to 400 at -1 mA, and a collector-emitter saturation voltage of -0.3 V maximum at -5 mA collector current.

Feature Summary

• Integrates a bias resistor directly into the transistor structure to reduce component count and assembly costs.
• Utilizes an ultra-small surface-mount package designed for very high-density circuit board mounting.
• Employs a PCT process for silicon epitaxial construction to ensure stable performance.

Applications

• Switching circuits
• Inverter circuits
• Interface circuits
• Driver circuits

Procurement Notes

Verify the specific ordering suffix against the manufacturer's official documentation to confirm packaging details and compliance status. Ensure that the procurement channel provides valid traceability for automotive or industrial qualification requirements if applicable. Cross-reference the part number with the latest datasheet revision to confirm pinout and absolute maximum ratings before finalizing orders.

Selection Notes

Select this component when a compact PNP switching solution with integrated biasing is required. The 4.7 kΩ internal resistor value suits standard logic interface applications. Consider the complementary RN1110MFV for NPN requirements. Evaluate thermal derating guidelines for power dissipation in dense PCB layouts to maintain reliability under continuous load conditions.

Part Context

This component belongs to the RN21xx series of Bias Resistor Built-in Transistors (BRTs). It serves as the PNP counterpart to the RN11xx series. The MFV,L3F designation indicates the specific SOT-723 package configuration and mass production lot coding used by Toshiba Semiconductor and Storage Corporation.

Replacement Considerations

The RN1110MFV is documented as the complementary NPN device within the same family. Direct cross-brand replacements require matching the SOT-723 footprint, -50V rating, and 4.7kΩ internal resistance. Verify pinout compatibility and hFE ranges before substituting with generic equivalents.

FAQ

What is the nominal value of the internal base resistor?

The internal base resistor (R1) for the RN2110MFV has a nominal value of 4.7 kΩ, with a typical range from 3.29 kΩ to 6.11 kΩ.

What is the maximum collector-emitter saturation voltage?

The maximum collector-emitter saturation voltage (VCE(sat)) is -0.3 V when tested at a collector current of -5 mA and a base current of -0.5 mA.

Is this device qualified for automotive applications?

While the datasheet mentions PPAP capability and AEC-Q101 qualification for the broader product line, specific confirmation for the RN2110MFV requires contacting Toshiba sales representatives for detailed qualification data.