RN2111ACT(TPL3)

RN2111ACT(TPL3)

$0.26
  • Description:TRANS PREBIAS PNP 50V 0.08A CST3
  • Series:-

SKU:9c0b24514532 Category: Brand:

  
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Product Detailed Parameters

  • Description:TRANS PREBIAS PNP 50V 0.08A CST3
  • Series:-
  • Mfr:Toshiba Semiconductor and Storage
  • Package:Tape & Reel (TR),Cut Tape (CT)
  • Resistors Included:R1 Only
  • Transistor Type:PNP - Pre-Biased
  • Current - Collector (Ic) (Max):80 mA
  • Voltage - Collector Emitter Breakdown (Max):50 V
  • Resistor - Base (R1):10 kOhms
  • Resistor - Emitter Base (R2):-
  • DC Current Gain (hFE) (Min) @ Ic, Vce:120 @ 1mA, 5V
  • Vce Saturation (Max) @ Ib, Ic:150mV @ 250µA, 5mA
  • Current - Collector Cutoff (Max):100nA (ICBO)
  • Frequency - Transition:-
  • Power - Max:100 mW
  • Grade:-
  • Qualification:-
  • Mounting Type:Surface Mount
  • Package / Case:SC-101, SOT-883
  • Supplier Device Package:CST3

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RN2111ACT(TPL3)

Overview

The RN2111ACT(TPL3) is a PNP digital transistor manufactured by Toshiba Semiconductor and Storage, featuring built-in bias resistors within an SC-70 surface-mount package. It integrates a single PNP bipolar junction transistor with two internal resistors: R1 (base resistor) of 10 kΩ and R2 (emitter resistor) of 10 kΩ. The device supports a maximum collector-emitter voltage (Vceo) of 50 V and a continuous collector current (Ic) of 100 mA. Key electrical parameters include a DC current gain (hFE) minimum of 50 at Ic=10mA, Vce=5V, and a saturation voltage (Vce(sat)) maximum of 300 mV at Ib=250µA, Ic=5mA. The transition frequency is rated at 200 MHz, with a power dissipation of 100 mW.

Feature Summary

  • Integrates PNP transistor with dual bias resistors for simplified circuit design
  • Optimized for low saturation voltage applications to improve switching efficiency
  • Compact SC-70 surface-mount package suitable for space-constrained designs

Applications

  • Switching circuits
  • Inverter circuits
  • Interface circuits
  • Driver circuits

Procurement Notes

Verify the specific ordering suffix TPL3 against the manufacturer's latest datasheet to confirm tape-and-reel packaging specifications. Confirm RoHS compliance status and lead times directly with authorized distributors or Toshiba Semiconductor and Storage sales representatives prior to procurement.

Selection Notes

Select this component when a PNP configuration with equal 10kΩ bias resistors is required. Ensure the 50V voltage rating and 100mA current capacity meet the load requirements. Compare hFE and Vce(sat) specifications against alternative pre-biased transistors if tighter gain or lower saturation performance is needed for the specific application.

Part Context

This part belongs to the RN series of bias resistor built-in transistors from Toshiba. These devices are designed to replace multiple discrete components, reducing board space and assembly costs. The RN211x series specifically offers PNP configurations with various resistor ratios, catering to standard logic interface and switching needs in consumer and industrial electronics.

Replacement Considerations

Publicly confirmed substitute part numbers for RN2111ACT(TPL3) were not found in the provided source material. Engineers should consult official cross-reference lists from Toshiba Semiconductor and Storage or authorized distributors for verified equivalent components.

RN2111ACT(TPL3)RN2111ACT(TPL3)
$0.26
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