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Product Detailed Parameters
- Description：TRANS PREBIAS PNP 50V 0.1A SSM
- Series：-
- Mfr：Toshiba Semiconductor and Storage
- Package：Tape & Reel (TR),Cut Tape (CT)
- Resistors Included：R1 Only
- Transistor Type：PNP - Pre-Biased
- Current - Collector (Ic) (Max)：100 mA
- Voltage - Collector Emitter Breakdown (Max)：50 V
- Resistor - Base (R1)：10 kOhms
- Resistor - Emitter Base (R2)：-
- DC Current Gain (hFE) (Min) @ Ic, Vce：120 @ 1mA, 5V
- Vce Saturation (Max) @ Ib, Ic：300mV @ 250µA, 5mA
- Current - Collector Cutoff (Max)：100nA (ICBO)
- Frequency - Transition：200 MHz
- Power - Max：100 mW
- Grade：-
- Qualification：-
- Mounting Type：Surface Mount
- Package / Case：SC-75, SOT-416
- Supplier Device Package：SSM
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Overview
The RN2111,LF(CT is a PNP bias resistor built-in transistor manufactured by Toshiba Semiconductor and Storage. It integrates a single NPN epitaxial planar silicon transistor with an internal base resistor in a compact SSM (SC-75/SOT-416) surface-mount package. Key electrical specifications include a maximum collector-emitter voltage of 50V and a continuous collector current of 100mA. The device features a typical base resistance of 4.7kΩ, a DC current gain of at least 50 at 10mA/5V, and a transition frequency of 200MHz. Maximum power dissipation is rated at 100mW.
Feature Summary
- Integrates a PNP transistor with a built-in bias resistor to simplify circuit design and reduce component count.
- Utilizes the PCT process for high reliability and stable performance in switching applications.
- Provides a compact surface-mount footprint suitable for space-constrained PCB layouts.
Applications
- Switching circuits
- Inverter circuits
- Interface circuits
- Driver circuits
Procurement Notes
Verify the specific suffix 'LF(CT' against the official Toshiba datasheet to confirm packaging type and compliance status. Ensure the ordering code matches the required reel quantity and tape specification for automated assembly processes. Cross-reference the manufacturer part number with distributor listings to confirm current availability and authenticity before procurement.
Selection Notes
Select this component when a PNP digital transistor with a 4.7kΩ base resistor is required. Compare the 50V Vceo and 100mA Ic limits against the target application's voltage and current demands. Consider the complementary RN1111 series if an NPN configuration is needed instead. Verify that the SSM package dimensions fit the designated board space.
Part Context
This device belongs to the Toshiba RN21xx series of bias resistor built-in transistors. These components are designed to replace discrete resistor-transistor networks, offering simplified manufacturing and reduced board area. The RN2111 specifically serves as the PNP counterpart to the RN1111 NPN device within the same functional family.
Replacement Considerations
Publicly confirmed substitute part numbers for this specific model were not identified in the provided source material. Engineers should consult official cross-reference guides or contact Toshiba sales for verified alternatives matching the 50V PNP BRT specifications.
