ChipApex | Global Electronic Components Supplier
SEARCH
Search Product
Search Post
— IC芯片 | 连接器 | 传感器 | 被动器件 —
Consult the customer manager about the wholesale price.
consultation hotline：86-132-6715-2157
email：[email protected]
Contact the product manager for consultation. One-stop consultation is available.
Do you want a lower wholesale price? Please send us your inquiry and we will reply immediately.
Product Detailed Parameters
- Description：TRANS PREBIAS PNP 50V 0.1A VESM
- Series：-
- Mfr：Toshiba Semiconductor and Storage
- Package：Tape & Reel (TR),Cut Tape (CT)
- Resistors Included：R1 Only
- Transistor Type：PNP - Pre-Biased
- Current - Collector (Ic) (Max)：100 mA
- Voltage - Collector Emitter Breakdown (Max)：50 V
- Resistor - Base (R1)：10 kOhms
- Resistor - Emitter Base (R2)：-
- DC Current Gain (hFE) (Min) @ Ic, Vce：120 @ 1mA, 5V
- Vce Saturation (Max) @ Ib, Ic：300mV @ 250µA, 5mA
- Current - Collector Cutoff (Max)：100nA (ICBO)
- Frequency - Transition：-
- Power - Max：150 mW
- Grade：-
- Qualification：-
- Mounting Type：Surface Mount
- Package / Case：SOT-723
- Supplier Device Package：VESM
Download product information
Overview
The RN2111MFV,L3F is a PNP epitaxial planar silicon transistor with built-in bias resistors, manufactured using Toshiba's PCT process. It features an ultra-small VESM (SOT-723) package designed for high-density mounting. The device integrates a base resistor (R1) of 10 kΩ and an emitter-base resistor (R2), reducing component count and assembly costs. Key electrical ratings include a collector-emitter voltage of -50 V, a collector current of -100 mA, and power dissipation of 150 mW at 25°C on an FR4 board. It offers a minimum DC current gain of 120 and is qualified under AEC-Q101 standards.
Feature Summary
- Integrates bias resistors directly into the transistor structure to minimize external components and reduce overall circuit size.
- Utilizes an ultra-small VESM surface-mount package optimized for high-density PCB layouts.
- Built using PCT (Planar Cut-Through) process technology for enhanced reliability and performance.
- AEC-Q101 qualified for automotive electronics applications.
Applications
- Switching circuits
- Inverter circuits
- Interface circuits
- Driver circuits
Procurement Notes
Verify the specific ordering suffix against the manufacturer's official documentation to ensure correct packaging and tape specifications. Confirm that the component meets all required environmental compliance standards for the target application. Review the latest Toshiba Semiconductor Reliability Handbook for derating guidelines and long-term stability data before finalizing procurement plans.
Selection Notes
Select this component when a compact PNP digital transistor with a 10 kΩ input resistance is required. Ensure the design accommodates negative voltage polarities inherent to PNP configurations. Verify that the thermal management strategy supports the 150 mW dissipation limit within the specified operating temperature range.
Part Context
This part belongs to the RN21xxMFV series of Bias Resistor Built-in Transistors (BRT). It serves as the PNP counterpart to the NPN RN1111MFV model. The series provides various resistor combinations for general-purpose switching and logic interface applications in consumer and industrial electronics.
Replacement Considerations
The RN1111MFV is documented as the complementary NPN equivalent. Direct substitution requires verifying polarity inversion and ensuring the circuit topology supports PNP operation instead of NPN.
FAQ
What is the typical value of the internal base resistor R1?
The typical value for the internal base resistor R1 is 10 kΩ.
Is this component suitable for automotive applications?
Yes, the RN2111MFV is qualified according to the AEC-Q101 standard for automotive electronic components.
What is the maximum collector-emitter voltage rating?
The maximum collector-emitter voltage (VCEO) is rated at -50 V.
