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The RN2112LF(CT is a Bias Resistor Built-in Transistor (BRT) manufactured by Toshiba Semiconductor and Storage. It features an NPN transistor configuration with a single internal connection topology. The device integrates two resistors: a base input resistor of 47 kΩ and an emitter-base resistor of 47 kΩ, resulting in a typical resistance ratio of 1:1. Key electrical ratings include a maximum collector-emitter voltage (VCEO) of 50 V, a continuous collector current (IC) of 100 mA, and a DC current gain (hFE) minimum of 100 at IC=10mA. The component operates within a temperature range of -55°C to +150°C and is housed in the SOT-723 surface-mount package.
Verify the specific ordering suffix against the manufacturer's latest datasheet to ensure correct packaging format and tape-and-reel specifications. Confirm RoHS compliance status and AEC-Q101 qualification requirements prior to procurement. Cross-reference the part number with official Toshiba Semiconductor and Storage catalogs to avoid counterfeit components.
Select this component when a compact NPN digital transistor solution is required for space-constrained designs. Ensure the 50V voltage rating and 100mA current capacity meet the load requirements. Verify that the integrated 47kΩ resistor values align with the driving logic levels and desired base current for the target application.
This component belongs to the RN21xx series of Bias Resistor Built-in Transistors from Toshiba. These devices are designed to replace discrete transistor-resistor combinations, offering improved board space efficiency and consistent electrical performance. The series supports various configurations including PNP and complementary pairs.
Potential substitutes include the RN2112MFV or other compatible NPN BRTs with matching 50V/100mA ratings and similar resistor values. Verify pinout compatibility and thermal characteristics before substitution.