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The RN2112,LXHF(CT is a PNP digital transistor manufactured by Toshiba Semiconductor and Storage. It integrates a single PNP bipolar junction transistor with internal biasing resistors in an SSM-3 package. Key electrical parameters include a collector-emitter voltage (VCEO) of -50 V, a continuous collector current (IC) of -100 mA, and a power dissipation (Pd) of 100 mW. The typical base resistor (R1) is 22 kOhms. The device features a maximum operating frequency of 200 MHz and a minimum DC current gain (hFE) of 70 at -10 mA and -5 V. It is qualified under AEC-Q200 for automotive applications.
Verify the specific suffix LXHF against the official Toshiba datasheet to confirm tape-and-reel packaging and automotive grade qualification. Ensure the ordering code matches the exact resistance values and package type required for the target application. Cross-reference with authorized distributors to confirm current availability and authenticity.
Select this component when a PNP digital transistor with a 22 kOhm base resistor is required. The SSM-3 package offers a compact footprint for space-constrained designs. Consider the -50 V rating and -100 mA current limit to ensure operation within safe boundaries. Verify thermal management requirements given the 100 mW power dissipation limit.
This part belongs to Toshiba's RN series of pre-biased transistors, which combine BJT functionality with integrated resistors. The RN2112 variant specifically provides a PNP configuration with a 22 kOhm input resistance. It is designed to replace discrete resistor-transistor combinations, reducing board space and assembly complexity in modern electronic systems.
Check for direct equivalents such as the RN2112 from other manufacturers or alternative Toshiba parts like the RN2111 or RN2113 if different resistance values are acceptable. Ensure pinout compatibility and electrical parameter alignment before substitution.