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Product Detailed Parameters
- Description：TRANS PREBIAS PNP 50V 0.1A VESM
- Series：-
- Mfr：Toshiba Semiconductor and Storage
- Package：Tape & Reel (TR),Cut Tape (CT)
- Resistors Included：R1 Only
- Transistor Type：PNP - Pre-Biased
- Current - Collector (Ic) (Max)：100 mA
- Voltage - Collector Emitter Breakdown (Max)：50 V
- Resistor - Base (R1)：22 kOhms
- Resistor - Emitter Base (R2)：-
- DC Current Gain (hFE) (Min) @ Ic, Vce：120 @ 1mA, 5V
- Vce Saturation (Max) @ Ib, Ic：300mV @ 500µA, 5mA
- Current - Collector Cutoff (Max)：100nA (ICBO)
- Frequency - Transition：-
- Power - Max：150 mW
- Grade：-
- Qualification：-
- Mounting Type：Surface Mount
- Package / Case：SOT-723
- Supplier Device Package：VESM
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Overview
The RN2112MFV,L3F is a PNP Bias Resistor Built-in Transistor (BRT) manufactured by Toshiba Electronic Devices & Storage Corporation. It integrates a single silicon epitaxial planar transistor with a built-in bias resistor in an ultra-small VESM (SOT-723) package. The device features a collector-emitter voltage of -50 V, a continuous collector current of -100 mA, and a power dissipation of 150 mW. The typical input resistance for the RN2112MFV variant is 22 kΩ. Designed for high-density mounting, it serves as a compact solution for switching, inverter, interface, and driver circuits.
Feature Summary
- Integrates a bias resistor directly into the transistor to reduce component count and assembly costs.
- Utilizes an ultra-small VESM package designed for very high density surface-mount applications.
- Complements the NPN RN1112MFV series for use in complementary circuit designs.
Applications
- Switching circuits
- Inverter circuits
- Interface circuits
- Driver circuits
Procurement Notes
Verify the specific ordering suffix L3F against official Toshiba documentation to confirm reel packaging specifications. Ensure compliance with RoHS directives and verify AEC-Q101 qualification status if automotive reliability standards are required for the target application environment.
Selection Notes
Select this component when a compact PNP digital transistor with a 22 kΩ input resistor is required. Compare against the RN2113MFV if a 47 kΩ input resistance is needed instead. Confirm that the -50 V voltage rating and -100 mA current capacity align with the load requirements of the intended switching or driving application.
Part Context
This part belongs to the RN21xxMFV family of Bias Resistor Built-in Transistors from Toshiba. These devices are engineered to replace discrete transistor and resistor combinations, simplifying PCB layout. The MFV designation indicates the specific SOT-723 (VESM) surface-mount package form factor used for space-constrained designs.
Replacement Considerations
The RN2113MFV,L3F is the direct complementary counterpart within the same package family, offering a different input resistance value. Verify pinout compatibility and electrical characteristics before substituting with other manufacturers' BRTs.
FAQ
What is the typical input resistance value for the RN2112MFV?
The typical input resistance (R1) for the RN2112MFV is 22 kΩ.
Is the RN2112MFV an NPN or PNP transistor?
The RN2112MFV is a Silicon PNP Epitaxial Type transistor.
What is the maximum collector-emitter voltage rating?
The absolute maximum collector-emitter voltage (VCEO) is -50 V.
