RN2113ACT(TPL3)

RN2113ACT(TPL3)

$0.26
  • Description:TRANS PREBIAS PNP 50V 0.08A CST3
  • Series:-

SKU:c1e08f3f4a61 Category: Brand:

  
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Product Detailed Parameters

  • Description:TRANS PREBIAS PNP 50V 0.08A CST3
  • Series:-
  • Mfr:Toshiba Semiconductor and Storage
  • Package:Tape & Reel (TR),Cut Tape (CT)
  • Resistors Included:R1 Only
  • Transistor Type:PNP - Pre-Biased
  • Current - Collector (Ic) (Max):80 mA
  • Voltage - Collector Emitter Breakdown (Max):50 V
  • Resistor - Base (R1):47 kOhms
  • Resistor - Emitter Base (R2):-
  • DC Current Gain (hFE) (Min) @ Ic, Vce:120 @ 1mA, 5V
  • Vce Saturation (Max) @ Ib, Ic:150mV @ 250µA, 5mA
  • Current - Collector Cutoff (Max):100nA (ICBO)
  • Frequency - Transition:-
  • Power - Max:100 mW
  • Grade:-
  • Qualification:-
  • Mounting Type:Surface Mount
  • Package / Case:SC-101, SOT-883
  • Supplier Device Package:CST3

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RN2113ACT(TPL3)

Overview

The RN2113ACT(TPL3) is a bias resistor built-in transistor (BRT) manufactured by Toshiba Semiconductor and Storage. It integrates a single NPN bipolar junction transistor with two internal resistors in a compact surface-mount package. The device features a collector-emitter voltage rating of 50V and a continuous collector current capacity of 100mA. Internal resistance values are typically configured as R1 at 47kΩ and R2 at 47kΩ, providing a fixed bias ratio. This component is designed for switching applications, offering simplified circuit design by eliminating external biasing components while maintaining reliable performance in low-power digital logic interfaces.

Feature Summary

  • Integrates an NPN BJT with dual internal bias resistors to reduce board space and assembly complexity
  • Optimized for high-speed switching operations within standard digital logic voltage levels
  • Provides consistent DC current gain characteristics due to factory-matched internal resistor ratios

Applications

  • General-purpose switching circuits in consumer electronics
  • Driver stages for small-signal loads and indicator LEDs
  • Interface level shifting between microcontroller GPIOs and peripheral devices

Procurement Notes

Verify the exact suffix TPL3 against the manufacturer's latest datasheet to confirm tape-and-reel packaging specifications and moisture sensitivity level. Ensure the ordering code matches the required resistance tolerance and hFE binning. Cross-reference the RoHS compliance status with current environmental regulations for your target market before finalizing procurement orders.

Selection Notes

Select this component when a compact NPN solution with integrated 47kΩ/47kΩ biasing is required. Compare the 50V Vceo and 100mA Ic limits against the load requirements. Consider the SC-88 or SOT-323 footprint availability if space constraints exist. Verify thermal dissipation capabilities under continuous duty cycles to ensure operation remains within the specified junction temperature range.

Part Context

This part belongs to Toshiba’s RN series of bias resistor built-in transistors, which are widely used in automotive and industrial applications. The RN2113 variant specifically denotes an NPN configuration with equal base and emitter resistor values. The TPL3 suffix indicates specific packaging and handling attributes defined by Toshiba for automated surface-mount assembly processes.

Replacement Considerations

Direct substitutes include other NPN BRTs with similar 50V ratings and 47kΩ/47kΩ internal resistances, such as the RN2113MFV or equivalent parts from other manufacturers like ROHM or ON Semiconductor. Verify pinout compatibility and package dimensions before substitution.

RN2113ACT(TPL3)RN2113ACT(TPL3)
$0.26
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