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The RN2113,LF(CT is a PNP bias resistor built-in transistor manufactured by Toshiba Semiconductor and Storage. It integrates a single base resistor (R1) of 47 kOhms with a PNP bipolar junction transistor in a compact SOT-723 surface-mount package. The device supports a maximum collector-emitter voltage (Vceo) of 50 V and a continuous collector current (Ic) of 100 mA. Key electrical characteristics include a minimum DC current gain (hFE) of 120 at 1 mA and 5 V, a maximum saturation voltage of 300 mV at 500 µA base current and 5 mA collector current, and a maximum power dissipation of 150 mW.
Verify the specific suffix 'LF(CT' against the manufacturer's official datasheet to confirm packaging type and RoHS compliance status. Ensure the ordering code matches the required reel or cut-tape configuration for your assembly line. Cross-reference the full part number with Toshiba Semiconductor and Storage documentation to validate availability and lead times before finalizing procurement plans.
Select this component when a PNP digital transistor with a 47 kOhm base resistance is required. It is suitable for designs needing a 50 V breakdown voltage and 100 mA current handling capability in a small SOT-723 footprint. Consider the 150 mW power dissipation limit and the 120 hFE gain specification for appropriate biasing calculations in your application circuit.
This part belongs to Toshiba's series of Bias Resistor Built-In Transistors (Digital Transistors). These devices combine a single BJT with internal resistors to replace discrete transistor-resistor networks. The RN2113 specifically offers a PNP configuration with a 47 kOhm input resistance, providing a compact solution for space-constrained printed circuit board layouts.
Publicly confirmed substitute part numbers are not available in the provided source material. Verify compatibility with alternative digital transistors based on matching pinout, voltage ratings, current capabilities, and internal resistance values using official cross-reference tools.