RN2113,LXHF(CT

Overview

The RN2113,LXHF(CT is a PNP bias resistor built-in transistor (BRT) manufactured by Toshiba Semiconductor and Storage. It integrates a single PNP transistor with an internal base resistor of 47 kOhms, designed for switching applications in SMD/SMT configurations. The device operates within a collector-emitter voltage range of -50 V and supports a continuous collector current of -100 mA. Key electrical characteristics include a minimum DC current gain (hfe) of 70 at specified test conditions and a maximum operating frequency of 200 MHz. Power dissipation is rated at 100 mW, with a maximum junction temperature of +150°C. The component is housed in the SS-3 package (equivalent to SOT-723) and meets AEC-Q101 automotive qualification standards.

Feature Summary

• Integrates a PNP transistor with a 47 kOhm base resistor for simplified circuit design
• Automotive-grade reliability certified under AEC-Q101 standards
• Compact surface-mount packaging suitable for high-density PCB layouts

Applications

• Automotive electronic control units requiring robust switching components
• General-purpose digital logic level shifting and interface circuits
• Power management systems utilizing low-voltage switching architectures

Procurement Notes

Verify the specific suffix LXHF against the manufacturer's latest datasheet to confirm tape-and-reel specifications and moisture sensitivity levels. Ensure compatibility with automated pick-and-place equipment regarding the SS-3 package dimensions. Cross-reference the AEC-Q101 qualification status with project requirements for automotive or industrial durability standards before finalizing procurement orders.

Selection Notes

Select this component when a PNP configuration with a 47 kOhm input resistance is required for space-constrained designs. Compare power dissipation ratings and thermal performance against alternative packages if higher current handling is needed. Verify that the -50 V collector-emitter voltage rating aligns with the system's supply voltage margins and transient spike protections.

Part Context

This part belongs to Toshiba's RN series of Bias Resistor Built-In Transistors, which combine transistors and resistors in a single package to reduce board space and assembly costs. The RN2113 variant specifically targets PNP applications, offering a standardized solution for replacing discrete transistor-resistor networks in consumer electronics and automotive modules.

Replacement Considerations

Check for direct pin-compatible alternatives such as the RN2113MFV,L3F from the same manufacturer. Evaluate other PNP BRTs with similar 47 kOhm base resistance and -50 V ratings from different vendors only if package dimensions and electrical parameters match exactly.