RN2113MFV,L3F

Overview

The RN2113MFV,L3F is a PNP bias resistor built-in transistor manufactured by Toshiba Semiconductor and Storage. It integrates a single base input resistor (R1) with a nominal value of 47 kΩ into a compact VESM package, which corresponds to the SOT-723 form factor. The device features a maximum collector-emitter voltage (VCEO) of -50 V and a continuous collector current (IC) rating of -100 mA. Electrical characteristics include a minimum DC current gain (hFE) of 120 at IC = -1 mA and VCE = -5 V, with a maximum collector-emitter saturation voltage (VCE(sat)) of -0.3 V at IC = -5 mA and IB = -0.5 mA. The component supports surface mount assembly and operates within a junction temperature range up to 150 °C.

Feature Summary

• Integrates a bias resistor directly into the transistor structure to reduce external component count and simplify circuit design.
• Utilizes an ultra-small VESM package designed for high-density mounting applications.
• Provides complementary functionality to the RN1112MFV and RN1113MFV series.

Applications

• Switching circuits
• Inverter circuits
• Interface circuits
• Driver circuits

Procurement Notes

Verify the specific ordering suffix L3F against official Toshiba documentation to confirm packaging details such as reel or cut tape specifications. Ensure that the procurement channel provides valid traceability and authenticity guarantees for semiconductor components. Cross-reference the manufacturer part number with authorized distributor listings to confirm current availability status and compliance with relevant environmental directives.

Selection Notes

Select this component when a PNP digital transistor with a 47 kΩ base resistor is required for space-constrained designs. Verify that the application voltage does not exceed the -50 V collector-emitter breakdown limit. Confirm that the load current remains within the -100 mA continuous rating. Consider the thermal dissipation capabilities in the VESM package if operating near maximum power limits.

Part Context

This component belongs to the RN21xxMFV series of bias resistor built-in transistors from Toshiba. These devices are engineered to replace discrete transistor and resistor combinations, thereby reducing board space and assembly costs. The RN2113MFV specifically offers a 47 kΩ input resistance, distinguishing it from other variants in the family that feature different resistance values.

Replacement Considerations

Direct functional equivalents may include the RN1113MFV for NPN polarity requirements. For alternative sourcing, verify compatibility with other manufacturers' PNP digital transistors featuring similar 47 kΩ base resistors and SOT-723/VESM packages, ensuring electrical parameters match the original specifications.