RN2114MFV,L3F

Overview

The RN2114MFV,L3F is a PNP Bias Resistor Built-in Transistor (BRT) manufactured by Toshiba Semiconductor and Storage. It integrates a single NPN biasing resistor (R1) of 1 kΩ with a PNP transistor in a compact SOT-723 (VESM) surface-mount package. The device supports a maximum collector-emitter voltage (Vceo) of 50 V and a continuous collector current (Ic) of 100 mA, with a power dissipation rating of 150 mW. Key electrical characteristics include a DC current gain (hFE) of at least 120 at Ic=1mA, Vce=5V, and a maximum saturation voltage (Vce(sat)) of 300 mV at Ib=500µA, Ic=5mA. The component is AEC-Q101 qualified for automotive applications.

Feature Summary

• Integrates a 1 kΩ base resistor with a PNP transistor to simplify circuit design and reduce component count.
• Optimized for low-voltage operation with a 50 V breakdown voltage and 100 mA current capacity.
• Features a compact SOT-723 (VESM) surface-mount package suitable for space-constrained PCB layouts.
• Automotive-grade reliability through AEC-Q101 qualification.

Applications

• General-purpose switching circuits in consumer electronics
• Driver stages for small-signal loads in automotive modules
• Logic level translation and interface buffering
• Battery management system control circuits

Procurement Notes

Verify the complete ordering part number includes the L3F suffix to ensure correct tape-and-reel packaging and specific manufacturing lot codes. Confirm that the SOT-723 footprint matches your PCB design guidelines. Check for any regional compliance certifications required for your target market, such as RoHS or REACH, which are standard for this product line but should be validated against the latest distributor documentation.

Selection Notes

Select this component when a pre-biased PNP solution is needed to drive low-current loads directly from logic outputs. The 1 kΩ internal resistor value is suitable for standard TTL/CMOS interfaces. Consider the 150 mW thermal limit and ensure adequate copper area on the PCB for heat dissipation. Compare with the RN2113 series if a higher resistance value (47 kΩ) is required for lower standby current consumption.

Part Context

This part belongs to Toshiba's RN21xx series of Bias Resistor Built-in Transistors (BRT). These devices replace discrete resistor-transistor combinations, offering improved consistency and reduced assembly time. The RN2114 variant specifically pairs a PNP transistor with a 1 kΩ resistor, distinguishing it from other series members like the RN2113 (47 kΩ) or RN2115 (10 kΩ).

Replacement Considerations

Direct substitutes within the same family include RN2114MFV,TPL3. For different resistance values, consider RN2113MFV,L3F (47 kΩ) or RN2115MFV,L3F (10 kΩ). Cross-brand replacements require verification of pinout compatibility, Vceo, Ic ratings, and hFE characteristics against the original datasheet specifications.