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Product Detailed Parameters
- Description：TRANS PREBIAS PNP 50V 0.1A SSM
- Series：-
- Mfr：Toshiba Semiconductor and Storage
- Package：Tape & Reel (TR),Cut Tape (CT)
- Resistors Included：R1 and R2
- Transistor Type：PNP - Pre-Biased
- Current - Collector (Ic) (Max)：100 mA
- Voltage - Collector Emitter Breakdown (Max)：50 V
- Resistor - Base (R1)：1 kOhms
- Resistor - Emitter Base (R2)：10 kOhms
- DC Current Gain (hFE) (Min) @ Ic, Vce：50 @ 10mA, 5V
- Vce Saturation (Max) @ Ib, Ic：300mV @ 250µA, 5mA
- Current - Collector Cutoff (Max)：500nA
- Frequency - Transition：200 MHz
- Power - Max：100 mW
- Grade：-
- Qualification：-
- Mounting Type：Surface Mount
- Package / Case：SC-75, SOT-416
- Supplier Device Package：SSM
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Overview
The RN2114(TE85L,F) is a single PNP epitaxial planar silicon transistor with built-in bias resistors, manufactured by Toshiba Semiconductor and Storage. It features a collector-emitter voltage of 50V, a continuous collector current of 100mA, and a power dissipation of 100mW. The device integrates an input resistor (R1) of 1kΩ and an emitter resistor (R2) of 10kΩ. Electrical characteristics include a DC current gain (hFE) of 30 to 50 at IC=10mA, VCE=-5V, and a transition frequency (fT) of 200MHz at IC=5mA, VCE=-10V.
Feature Summary
- Built-in bias resistors simplify circuit design and reduce component count
- Single PNP configuration suitable for inverter and driver circuits
- High-speed switching capability with a 200MHz transition frequency
Applications
- Switching circuits
- Inverter circuits
- Interface circuits
- Driver circuits
Procurement Notes
Verify the specific ordering suffix TE85L,F against official Toshiba documentation to confirm packaging type and lead time requirements. Ensure compliance with RoHS directives and JEDEC standards before procurement. Confirm that the absolute maximum ratings are not exceeded during operation to maintain reliability.
Selection Notes
Select this component when a single PNP digital transistor with a 1:10 resistor ratio is required. Verify that the 50V collector-emitter voltage and 100mA current limits meet the application demands. Consider the complementary RN1107 series if an NPN equivalent is needed for push-pull configurations.
Part Context
The RN2114 belongs to the RN2114-RN2118 family of pre-biased transistors from Toshiba. These devices utilize a P CT process for high-speed performance. The TE85L,F suffix indicates a specific tape-and-reel packaging format designed for automated surface-mount assembly processes.
Replacement Considerations
The RN1107 series serves as the complementary NPN counterpart within the same product family. Direct substitution requires verifying matching resistor ratios and electrical parameters such as hFE and saturation voltage.
