RN2115,LF(CT

$0.15

Description：TRANS PREBIAS PNP 50V 0.1A SSM
Series：-

SKU:7910aecd1cfb Category: Single, Pre-Biased Bipolar Transistors Brand: Toshiba Semiconductor and Storage

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Product introduction

Product Detailed Parameters

Description：TRANS PREBIAS PNP 50V 0.1A SSM
Series：-
Mfr：Toshiba Semiconductor and Storage
Package：Tape & Reel (TR),Cut Tape (CT)
Resistors Included：R1 and R2
Transistor Type：PNP - Pre-Biased
Current - Collector (Ic) (Max)：100 mA
Voltage - Collector Emitter Breakdown (Max)：50 V
Resistor - Base (R1)：2.2 kOhms
Resistor - Emitter Base (R2)：10 kOhms
DC Current Gain (hFE) (Min) @ Ic, Vce：50 @ 10mA, 5V
Vce Saturation (Max) @ Ib, Ic：300mV @ 250µA, 5mA
Current - Collector Cutoff (Max)：500nA
Frequency - Transition：200 MHz
Power - Max：100 mW
Grade：-
Qualification：-
Mounting Type：Surface Mount
Package / Case：SC-75, SOT-416
Supplier Device Package：SSM

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RN2115,LF(CT

Overview

The RN2115,LF(CT is a PNP epitaxial planar silicon transistor with built-in bias resistors. It features a collector-emitter voltage of 50V and a continuous collector current of 100mA. The device includes an internal base resistor (R1) of 2.2kΩ and an emitter-base resistor (R2) of 10kΩ. Electrical characteristics include a DC current gain (hFE) of at least 50 at IC=10mA and VCE=-5V, and a transition frequency (fT) of 200MHz. Maximum power dissipation is 100mW.

Feature Summary

Integrates two bias resistors to simplify circuit design and reduce component count.
Utilizes PCT process for high reliability and stable performance.
Offers complementary functionality to the RN1107 through RN1109 NPN series.

Applications

Switching circuits
Inverter circuits
Interface circuits
Driver circuits

Procurement Notes

Verify the specific ordering suffix against official Toshiba Semiconductor and Storage documentation to confirm packaging format and tape-and-reel specifications. Ensure compliance with AEC-Q101 requirements if automotive qualification is necessary for the target application environment.

Selection Notes

Select this model when a PNP digital transistor with a low base resistance value is required for faster switching or higher drive capability. Compare the 2.2kΩ R1 value against other variants in the RN2114-2118 series to ensure proper input impedance matching for the specific interface logic levels.

Part Context

This component belongs to the RN2114 through RN2118 family of bias resistor built-in transistors. These devices share identical electrical ratings for voltage, current, and package type, differing only in the values of the integrated bias resistors to accommodate various input drive conditions.

Replacement Considerations

Publicly confirmed substitute part numbers are not available in the provided source material. Verify compatibility with alternative digital transistors by matching the PNP configuration, 50V rating, SSM package dimensions, and equivalent bias resistor ratios.

How to buy

Online and offline orders are supported. If the item is available for online purchase, you can place it in the cart; for wholesale pricing, please contact our product manager for a quote.

Payment Method

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Delivery time

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Freight calculation

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Return and Refund

Returns are accepted within 60 days of invoice with RMA approval. Items must be resalable; original invoice and test report are required. No returns for customer errors.