RN2115MFV,L3F

Overview

The RN2115MFV,L3F is a single NPN pre-biased bipolar junction transistor manufactured by Toshiba Semiconductor and Storage. It integrates bias resistors within a compact SOT-723 (VESM) surface-mount package. Key electrical specifications include a collector-emitter breakdown voltage of 50 V, a continuous collector current of 100 mA, and a maximum power dissipation of 150 mW. The device features an internal base resistor (R1) of 4.7 kOhms and an emitter resistor (R2) of 10 kOhms. It offers a minimum DC current gain (hFE) of 120 at 1 mA and 5 V, with a saturation voltage of 300 mV at 500 µA base current and 5 mA collector current. The component is designed for high-frequency applications up to 250 MHz.

Feature Summary

• Integrates dual bias resistors (R1 and R2) to simplify circuit design and reduce board space.
• Optimized for high-speed switching operations with a transition frequency of 250 MHz.
• Constructed in a small SOT-723 surface-mount package for automated assembly compatibility.

Applications

• Interface circuits for digital logic level shifting
• Driver stages for small-signal switching loads
• General-purpose switching applications in consumer electronics

Procurement Notes

Verify the specific suffix L3F against the manufacturer's latest datasheet to confirm tape-and-reel packaging quantities and RoHS compliance status. Confirm availability as part numbers may transition between active and obsolete statuses. Request the official specification document directly from Toshiba Semiconductor and Storage or authorized distributors to validate pinout configurations and absolute maximum ratings prior to integration.

Selection Notes

Select this component when a compact NPN solution with integrated biasing is required for high-speed switching. Ensure the 50 V collector-emitter voltage rating exceeds the maximum circuit operating voltage. Verify that the 100 mA collector current limit accommodates the load requirements. Compare the 4.7 kOhm base resistance value against the driving source capabilities to ensure adequate base drive current for saturation.

Part Context

This part belongs to the RN211x series of Bias Resistor Built-in Transistors (BRITs) from Toshiba. These devices are designed to replace discrete transistor and resistor networks, offering improved reliability and reduced footprint in modern electronic designs. The series includes various PNP and NPN options with different resistor ratios to suit diverse interface requirements.

Replacement Considerations

Direct substitutes must match the NPN polarity, 50 V rating, 100 mA current capacity, and SOT-723 package. Verify equivalent internal resistor values (R1=4.7k, R2=10k) and hFE characteristics. Cross-reference with other manufacturers' BRT offerings such as those from ON Semiconductor or ROHM, ensuring pinout compatibility and thermal performance alignment.