RN2116,LF(CT

Overview

The RN2116,LF(CT is a single PNP bias resistor built-in transistor manufactured by Toshiba Semiconductor and Storage. It integrates a silicon epitaxial planar transistor with internal bias resistors to simplify circuit design. The device features a collector-emitter voltage rating of 50V and a continuous collector current capacity of 100mA. Internal resistance values are fixed at R1 = 4.7 kOhms and R2 = 10 kOhms. Electrical performance includes a minimum DC current gain (hFE) of 50 at 10mA/5V and a maximum collector-emitter saturation voltage of 300mV at 250µA base current and 5mA collector current. Transition frequency reaches 200MHz, with a maximum power dissipation of 100mW in the SSM-3 package.

Feature Summary

• Integrates a PNP transistor with built-in bias resistors for simplified circuit design
• Reduces component count and manufacturing complexity through integrated passive elements
• Provides complementary functionality within the RN series family

Applications

• Switching circuits
• Inverter circuits
• Interface circuits
• Driver circuits

Procurement Notes

Verify the specific ordering suffix against official manufacturer documentation before procurement. Confirm that the requested part number matches the exact electrical characteristics and packaging requirements defined in the datasheet. Ensure compliance with environmental standards such as RoHS where applicable. Cross-reference the manufacturer's latest product status to confirm availability and obsolescence warnings prior to finalizing orders.

Selection Notes

Select this component when a single PNP digital transistor with specific 4.7kΩ and 10kΩ bias resistors is required. Verify that the 50V collector-emitter voltage and 100mA current ratings align with the target application load. Consider the transition frequency and saturation voltage specifications to ensure compatibility with switching speeds and drive levels. Compare against other RN series variants if different resistor ratios or NPN configurations are needed.

Part Context

This component belongs to the Toshiba RN series of bias resistor built-in transistors, specifically designed for general-purpose switching and logic applications. The RN2116 variant provides a PNP configuration with defined internal resistance values. It is part of a broader family including complementary NPN devices like the RN1107 series, allowing for balanced design options in interface and driver stages.

Replacement Considerations

Publicly confirmed substitute part numbers for the RN2116,LF(CT were not identified in the provided source material. Consult official distributor databases or manufacturer cross-reference guides for potential alternatives.