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The RN2116,LXHF(CT is a PNP pre-biased digital transistor manufactured by Toshiba Semiconductor and Storage. It integrates a single silicon epitaxial planar PNP transistor with bias resistors in an SSM-3 (SOT-416) surface-mount package. Key electrical parameters include a collector-emitter voltage (VCEO) of -50 V, a continuous collector current (IC) of -100 mA, and a power dissipation (Pd) of 100 mW. The device features a typical base resistor (R1) of 4.7 kOhms and an emitter-base resistor (R2) of 10 kOhms. It meets AEC-Q200 automotive qualification standards and operates at a maximum junction temperature of +150°C.
Verify the specific suffix LXHF against the official Toshiba datasheet to confirm packaging details and automotive grade compliance. Ensure the ordering code matches the required reel or cut tape configuration. Cross-reference the manufacturer part number with authorized distributors to validate authenticity and current production status before finalizing procurement.
Select this component for PNP switching applications requiring integrated biasing. Verify that the 4.7 kOhm base resistance aligns with the input drive requirements. Confirm that the -50 V voltage rating and -100 mA current capacity exceed the circuit's maximum operating conditions. Check thermal constraints to ensure the 100 mW power dissipation limit is not exceeded in the target environment.
This part belongs to Toshiba's RN series of pre-biased transistors, which are designed to replace discrete resistor-transistor combinations. The RN2116 specifically provides a PNP solution with defined internal resistance ratios, offering a compact alternative to discrete designs in signal processing and logic interface roles within consumer and automotive electronics.
Check for direct cross-references from other manufacturers such as ROHM or ON Semiconductor offering identical pinouts and electrical characteristics in the SOT-416 package. Verify that any substitute maintains the same AEC-Q200 qualification if automotive use is intended.