RN2116MFV,L3F

Overview

The RN2116MFV,L3F is a single NPN bias resistor built-in transistor manufactured by Toshiba Semiconductor and Storage. It integrates an NPN epitaxial planar silicon transistor with two internal bias resistors in a compact SOT-723 (VESM) surface-mount package. The device features a collector-emitter voltage rating of 50 V and a continuous collector current capacity of 100 mA, with a maximum power dissipation of 150 mW. Key electrical parameters include a typical input resistance of 4.7 kOhms, a minimum DC current gain (hFE) of 50, and a transition frequency of up to 250 MHz. It operates within a temperature range extending to +150°C and holds AEC-Q101 qualification for automotive reliability.

Feature Summary

• Integrates NPN transistor with dual bias resistors to simplify circuit design and reduce component count
• AEC-Q101 qualified for enhanced reliability in automotive electronic applications
• Compact SOT-723 surface-mount package optimized for high-density PCB layouts

Applications

• Switching circuits in automotive control modules
• Inverter circuits for signal processing
• Interface circuits between microcontrollers and peripheral devices

Procurement Notes

Verify the complete part number including the L3F suffix to ensure correct packaging and compliance specifications. Confirm AEC-Q101 qualification status if the application requires automotive-grade reliability standards. Cross-reference the datasheet revision date to ensure alignment with current manufacturing specifications and RoHS directives before finalizing procurement orders.

Selection Notes

Select this component when a single NPN switching element with integrated base biasing is required. Ensure the 4.7 kOhm input resistance matches the driving source impedance requirements. Verify that the 50 V collector-emitter voltage exceeds the maximum circuit operating voltage. Consider the 150 mW power dissipation limit relative to the expected thermal environment and duty cycle.

Part Context

This component belongs to the RN11xx/RN21xx series of Bias Resistor Built-In Transistors (Digital Transistors). These devices are designed to replace discrete transistor-resistor networks, offering space savings and simplified assembly. The RN2116 variant specifically provides NPN polarity with a 4.7 kOhm base resistor, complementing other series members with different resistance ratios and polarities.

Replacement Considerations

Direct substitutes must match the NPN polarity, 50 V VCEO, 100 mA Ic, and SOT-723 package. Verify equivalent hFE and R1 values from competitor datasheets. Ensure the replacement also meets AEC-Q101 requirements if used in automotive contexts.