RN2117MFV,L3F

Overview

The RN2117MFV,L3F is a PNP bias resistor built-in transistor (BRT) manufactured by Toshiba Semiconductor and Storage. It integrates a single NPN BJT with an internal base resistor, housed in a compact SOT-723 surface-mount package. The device supports a collector-emitter voltage of 50 V and a continuous collector current of 100 mA, with a power dissipation rating of 150 mW. It features a minimum DC current gain (hFE) of 30 and operates up to a maximum junction temperature of +150°C. The component is qualified under the AEC-Q101 automotive reliability standard.

Feature Summary

• Integrates a pre-biased PNP transistor with a built-in base resistor to simplify circuit design and reduce component count.
• Qualified for automotive applications through compliance with the AEC-Q101 reliability stress test standard.
• Utilizes a small SOT-723 surface-mount package to minimize printed circuit board real estate requirements.

Applications

• Switching circuits in automotive electronic control units
• Inverter driver circuits for motor control
• Interface connection logic level shifting
• General-purpose digital switching in industrial equipment

Procurement Notes

Verify the specific ordering suffix against the manufacturer's official documentation to confirm exact packaging configurations and lot traceability. Ensure that procurement channels provide valid certificates of conformity and authenticity to mitigate counterfeiting risks. Confirm that the delivered components match the specified AEC-Q101 qualification status required for automotive integration.

Selection Notes

Select this component when a PNP configuration with integrated biasing is required for space-constrained designs. Compare the internal resistance value and hFE characteristics against alternative models such as the complementary RN1117MFV to ensure compatibility with the target logic levels and drive currents. Verify that the thermal performance aligns with the system's power dissipation constraints within the SOT-723 footprint.

Part Context

This part belongs to the RN1117 series of bias resistor built-in transistors from Toshiba. The series offers various combinations of NPN and PNP polarities with different internal resistance values. These devices are designed to replace discrete transistor-resistor networks, providing a standardized solution for digital switching applications across consumer, industrial, and automotive sectors.

Replacement Considerations

The RN1117MFV serves as the complementary NPN counterpart within the same product family. When substituting, verify that the polarity inversion matches the circuit topology and that the electrical parameters, including saturation voltage and current gain, remain within acceptable limits for the application.